Výsledky vyhledávání - "Neilson, Kathryn M."

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CMOS-compatible Strain Engineering for High-Performance Monolayer Semiconductor Transistors

Autor: Jaikissoon, Marc, Köroğlu, Çağıl, Yang, Jerry A., Neilson, Kathryn M., Saraswat, Krishna C., Pop, Eric

Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a CMOS (co

Externí odkaz: http://arxiv.org/abs/2405.09792

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Toward Mass-Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization

Autor: Neilson, Kathryn M., Hamtaei, Sarallah, Nazif, Koosha Nassiri, Carr, Joshua M., Rahimisheikh, Sepideh, Nitta, Frederick U., Brammertz, Guy, Blackburn, Jeffrey L., Hadermann, Joke, Saraswat, Krishna C., Reid, Obadiah G., Vermang, Bart, Daus, Alwin, Pop, Eric

Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to desirable band gaps, high absorption coefficients, and ideally dangling-bond-free surfaces. Despite their potential, the majority of TMD

Externí odkaz: http://arxiv.org/abs/2402.08534

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Enhanced Meta-Displays Using Advanced Phase-Change Materials

Autor: Hemmatyar, Omid, Abdollahramezani, Sajjad, Zeimpekis, Ioannis, Lepeshov, Sergey, Krasnok, Alex, Khan, Asir Intisar, Neilson, Kathryn M., Teichrib, Christian, Brown, Tyler, Pop, Eric, Hewak, Daniel W., Wuttig, Matthias, Alu, Andrea, Muskens, Otto L., Adibi, Ali

Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations of these

Externí odkaz: http://arxiv.org/abs/2107.12159

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Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films

Autor: Wahid, Sumaiya, Daus, Alwin, Khan, Asir Intisar, Chen, Victoria, Neilson, Kathryn M., Islam, Mahnaz, Pop, Eric

Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low

Externí odkaz: http://arxiv.org/abs/2107.08301

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Fragility of Fermi arcs in Dirac semimetals

Autor: Wu, Yun, Jo, Na Hyun, Wang, Lin-Lin, Schmidt, Connor A., Neilson, Kathryn M., Schrunk, Benjamin, Swatek, Przemyslaw, Eaton, Andrew, Bud'ko, S. L., Canfield, P. C., Kaminski, Adam

Publikováno v: Phys. Rev. B 99, 161113(R) 2019

We use tunable, vacuum ultraviolet laser-based angle-resolved photoemission spectroscopy and density functional theory calculations to study the electronic properties of Dirac semimetal candidate cubic PtBi${}_{2}$. In addition to bulk electronic sta

Externí odkaz: http://arxiv.org/abs/1904.03138

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