Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Neil Weste"'
Publikováno v:
Proceedings of the IEEE. 109:1253-1275
Over the last decade, dc–dc power converters have attracted significant attention due to their increased use in a number of applications from aerospace to renewable energy. The interest in wide bandgap (WBG) power semiconductor devices stems from o
Publikováno v:
2021 IEEE Aerospace Conference (50100).
In this paper we present a description and evaluation of Gallium Nitride (GaN) Transceivers within AESA frontends for space-based Synthetic-aperture radar (SAR). The GaN power switches are evaluated in a voltage mode Class-D (VMCD) RF amplifier and a
Autor:
Okan Yurduseven, Aaron Pereira, Satyaki Ganguli, Kyle Bothe, Said Al-Sarawi, Neil Weste, Derek Abbott
Publikováno v:
Yurduseven, O, Pereira, A, Ganguli, S, Bothe, K, Al-Sarawi, S, Weste, N & Abbott, D 2020, ' Next Generation Phased Array Antennas for Satellite Communications ', 71st International Astronautical Congress (IAC) – The CyberSpace Edition, 12/10/2020-14/10/2020 . < https://www.iafastro.org/events/iac/iac-2020/ >
Queen's University Belfast-PURE
Queen's University Belfast-PURE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::111bd0483cb3f66f32cb906efd8e9fc3
https://pure.qub.ac.uk/en/publications/next-generation-phased-array-antennas-for-satellite-communications(a375d609-5a21-47b2-b568-bc79f7607b64).html
https://pure.qub.ac.uk/en/publications/next-generation-phased-array-antennas-for-satellite-communications(a375d609-5a21-47b2-b568-bc79f7607b64).html
Publikováno v:
2020 IEEE Aerospace Conference.
In this paper we present a description and evaluation of commercial foundry Gallium Nitride (GaN) RF HEMTs as power switches in high frequency switching circuits. The switches are used within the multifunctional blocks for a system-on-chip of the fro
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 64:296-309
Digital harmonic-cancelling sine-wave synthesizers (DHSSs) use a 47 year old concept, recently revived as a power and area efficient solution for on-chip sine-wave synthesis. The operation of a DHSS involves amplitude scaling and summing a set of squ
Autor:
Derek Abbott, Said F. Al-Sarawi, Neil Weste, Aaron Pereira, V. Carrubba, Ruediger Quay, Jutta Kuhn
Publikováno v:
2018 IEEE Radar Conference (RadarConf18).
This paper reports an X-Band High Power Amplifier (HPA) integrated with a power switch demonstrated for the first time in a 0.25 µm GaN process. The power switch and its drivers are implemented in a synchronous buck converter topology with off-chip
Publikováno v:
2018 IEEE Radar Conference (RadarConf18).
This paper describes the potentials and limitations of commercially available bare-die RF GaN HEMTs as a power stage in switch-based supply modulators. The impact of trapping on the efficiency of high frequency switching circuits is investigated by c
Publikováno v:
2017 IEEE Asia Pacific Microwave Conference (APMC).
A highly efficient, single stage broadband power amplifier was designed and fabricated in WIN Semiconductor 0.10 μm GaAs technology. Reactive matching networks were used to optimize the broadband performance in Class AB topology. This was obtained b
Publikováno v:
2016 87th ARFTG Microwave Measurement Conference (ARFTG).
This paper reports the investigation of RF GaN HEMTs as integrated power switches in high frequency, high efficiency switching topologies. GaN HEMTs suffer from trap phenomena which degrades the performance of the HEMT when used as power switches. Pu
Publikováno v:
ISCAS
Digital harmonic-cancelling sine-wave synthesizers (DHSSs) enable programmable, low cost, spectrally pure, sinusoidal signal synthesis for application areas such as communication systems, and on-chip testing of analog/mixed-signal integrated circuits