Zobrazeno 1 - 10
of 263
pro vyhledávání: '"Neil Goldsman"'
Publikováno v:
IEEE Transactions on Nuclear Science. 69:900-907
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73cbb6fd26c35104444fa86327832a9f
https://doi.org/10.1109/tns.2022.3154394
https://doi.org/10.1109/tns.2022.3154394
Publikováno v:
2022 IEEE Applied Power Electronics Conference and Exposition (APEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88864ec28459fc0574b27690ec041707
https://doi.org/10.1109/apec43599.2022.9773769
https://doi.org/10.1109/apec43599.2022.9773769
Autor:
Yumeng Cui, F. Nouketcha, Neil Goldsman, Aivars J. Lelis, Ronald Green, Jonathan Schuster, Christopher Darmody
Publikováno v:
IEEE Transactions on Electron Devices. 67:3999-4005
We survey impact-ionization coefficients for silicon, wide bandgap semiconductors (gallium nitride and 4H-silicon carbide), and ultrawide-bandgap semiconductors (aluminum gallium nitride, beta-gallium oxide, and diamond). We employ a custom genetic a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::323aa4483fad246e4f04b34a418c3f2b
https://doi.org/10.1109/ted.2020.3009622
https://doi.org/10.1109/ted.2020.3009622
Autor:
Saikat Dey, Ayan Mallik, Neil Goldsman, Akin Akturk, Zeynep Dilli, Chris Darmody, Usama Khalid
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e68f596dbd1805d3e56ffa8f7c7a352f
https://doi.org/10.1109/wipda49284.2021.9645084
https://doi.org/10.1109/wipda49284.2021.9645084
Publikováno v:
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0568c2df559c48f1f47e898a0556ccb3
https://doi.org/10.1109/wipda49284.2021.9645103
https://doi.org/10.1109/wipda49284.2021.9645103
Publikováno v:
IECON
This paper presents the design and development of a Silicon Carbide (SiC) technology-based Non-Inverting Buck-Boost (NIBB) DC-DC power conversion unit for harsh space environment application with very high temperature (HT) (>150°C) and high radiatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f98d244ca9eb3342bc7a5c66720700
https://doi.org/10.1109/iecon48115.2021.9589983
https://doi.org/10.1109/iecon48115.2021.9589983
Autor:
Daniel J. Lichtenwalner, Brett Hull, J. M. McGarrity, Richard Wilkins, David Grider, Akin Akturk, Neil Goldsman
Publikováno v:
IEEE Transactions on Nuclear Science. 66:1828-1832
A phenomenological expression for predicting atmospheric neutron-induced failure rates in silicon carbide (SiC) power devices is presented. This expression that relates the local electric field to terrestrial neutron-induced failure rate is derived u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62959da74db93a8cb005ea83d228bef3
https://doi.org/10.1109/tns.2019.2919334
https://doi.org/10.1109/tns.2019.2919334
Autor:
Edl Schamiloglu, Greg Heileman, Payman Zarkesh-Ha, Thomas M. Antonsen, Ganesh Balakrishnan, Salvador Portillo, Edo Waks, David Dietz, Neil Goldsman, Sameer Hemmady, Manel Martínez-Ramón
Publikováno v:
2021 United States National Committee of URSI National Radio Science Meeting (USNC-URSI NRSM).
This abstract covers Part-II of a two-part presentation series on the scientific advancements made in the AFOSR/AFRL Center of Excellence (CoE) for Electronics in Extreme Electromagnetic Environments, spanning the time-period 2015-present. In specifi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9043be5acd80a84d2810da30de059130
https://doi.org/10.23919/usnc-ursinrsm51531.2021.9336483
https://doi.org/10.23919/usnc-ursinrsm51531.2021.9336483
Publikováno v:
2020 IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES).
This paper proposes a high temperature (HT) and radiation tolerant silicon carbide (SiC) technology that is comprised of integrated circuits and complementary power devices for use in power applications such as spacecraft motor drive modules for robo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bbd0d576015710c4c6ad76c1c0c2730
https://doi.org/10.1109/pedes49360.2020.9379426
https://doi.org/10.1109/pedes49360.2020.9379426
Autor:
Akin Akturk, Brett Hull, Daniel J. Lichtenwalner, J. M. McGarrity, David Grider, Neil Goldsman, Richard Wilkins
Publikováno v:
IEEE Transactions on Nuclear Science. 65:1248-1254
Investigations of terrestrial neutron radiation-induced failures in silicon carbide power MOSFETs and diodes indicate that the failures are related to a hole-initiated impact ionization process followed by a thermal transient resulting in the loss of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9d37ec6f4758bc81845e879bba3c94d
https://doi.org/10.1109/tns.2018.2833741
https://doi.org/10.1109/tns.2018.2833741