Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Neil Bryan Henis"'
Publikováno v:
SPIE Proceedings.
We report here on process integration issues in the interconnect module of advanced microprocessor. We show how stresses in certain layers can affect yield and result in novel failure mechanisms in other layers. The paper will follow the history of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fe0bc2a68eb7255a44ec0c7ecf420b3
https://doi.org/10.1117/12.324375
https://doi.org/10.1117/12.324375
Publikováno v:
SPIE Proceedings.
Shadowing of lightly doped drain (LDD) implants at the gate edge can cause shifts in effective electrical channel length (Leff), drive current (Ids) and transistor asymmetry. Process integration of gate etch and LDD implant processing and equipment i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2d9343843ae6e3669f76f6161a033c7
https://doi.org/10.1117/12.250862
https://doi.org/10.1117/12.250862
Publikováno v:
SPIE Proceedings.
As integrate circuit geometries, capital for defect detection equipment, and process cycle time decrease simultaneously, prioritizing continuous yield improvement activities becomes essential. One approach for achieving this goal is to integrate yiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f11070c8b3b6467a16f603fb0ce14c0c
https://doi.org/10.1117/12.186756
https://doi.org/10.1117/12.186756
Publikováno v:
SPIE Proceedings.
One of the major sources of particles today is from processing equipment. As die size continues to shrink, more effort needs to be placed in defect detection and elimination. A defect of 1 - 2 microns in size, while barely noticeable 5 years ago, can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38bf93f0a9157f1417371d101df740b6
https://doi.org/10.1117/12.186739
https://doi.org/10.1117/12.186739