Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Neil Brahma"'
Autor:
Neil Brahma, Jan B. Talbot
Publikováno v:
Journal of Colloid and Interface Science. 419:56-60
The aggregation behavior for 150 nm alumina particles suspended in 1 mM KNO3 solutions with various additives used in chemical mechanical planarization of copper was investigated. Three behaviors were observed: no aggregation, reversible aggregation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::687b1c5a1cb530e48c964dc890997f4a
https://doi.org/10.1016/j.jcis.2013.12.029
https://doi.org/10.1016/j.jcis.2013.12.029
Autor:
Neil Brahma, Jan B. Talbot
Publikováno v:
ECS Transactions. 33:53-58
The rate of agglomeration of alumina particles in 1 mM KNO3 solutions with various additives with a range of pH values was measured. The suspensions tested contained only glycine and glycine, H2O2, benzotriazole, and sodium dodecyl sulfate. A fractal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85aac6949912d72a27f1c381c7761a65
https://doi.org/10.1149/1.3489045
https://doi.org/10.1149/1.3489045
Autor:
Jan B. Talbot, Neil Brahma
Publikováno v:
Journal of colloid and interface science. 419
The aggregation rate and mechanism of 150 nm alumina particles in 1 mM KNO3 with various additives used in chemical mechanical planarization of copper were investigated. The pH of each suspension was ∼8 such that the aggregation rate was slow enoug
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc5e3f4628f1a88e73433e34383adc32
https://pubmed.ncbi.nlm.nih.gov/24491325
https://pubmed.ncbi.nlm.nih.gov/24491325
Autor:
Neil Brahma, J. B. Talbot
Publikováno v:
ECS Meeting Abstracts. :2511-2511
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76d12c8597251da7fd73bc9a817afe22
https://doi.org/10.1149/ma2012-02/29/2511
https://doi.org/10.1149/ma2012-02/29/2511
Publikováno v:
ECS Meeting Abstracts. :732-732
Chemical mechanical planarization (CMP) utilizes mechanical abrasion and chemical etching simultaneously to attain a uniformly planarized surface for integrated circuit chip manufacturing. The process is affected by abrasive size and size distributio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b4b8c5b6b64e68e1fc2f9d236aeb57f
https://doi.org/10.1149/ma2009-01/16/732
https://doi.org/10.1149/ma2009-01/16/732