Zobrazeno 1 - 10
of 152
pro vyhledávání: '"Negative luminescence"'
Autor:
Edgar Meyhofer, Pramod Reddy, Dakotah Thompson, Anthony Fiorino, Rohith Mittapally, Linxiao Zhu
Publikováno v:
Nature. 566(7743)
Photonic cooling of matter has enabled both access to unexplored states of matter, such as Bose–Einstein condensates, and novel approaches to solid-state refrigeration1–3. Critical to these photonic cooling approaches is the use of low-entropy co
Publikováno v:
Journal of Electronic Materials. 44:3134-3143
This paper presents results from three-dimensional quantitative modeling on dense, moderately doped [ND (NA) = 5 × 1015 cm−3] short-wave infrared (SWIR) p+n and n+p Hg1−xCdxTe double planar heterostructure photodetecting arrays with absorber x =
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Publikováno v:
Infrared Physics & Technology. 55:522-526
We present the results of theoretical and experimental investigation of interference effects of negative luminescence (NL) in planar resonator structures with an optically thin active semiconductor layer, as well as association of those effects with
Autor:
A. L. Zakgeim, B. A. Matveev, N. M. Stus, A. Yu. Rybal’chenko, M. A. Remennyy, N. D. Il’inskaya, V. I. Ratushnyi, S. A. Karandashev, Anton E. Chernyakov
Publikováno v:
Semiconductors. 46:690-695
The current-voltage characteristics and temperature dependences of zero-bias dynamic resistance are analyzed for InAsSb photodiodes, with consideration for current crowding near the anode, using experimental data on the intensity distribution of posi
Autor:
I. V. Mzhelskii, S. A. Karandashev, V. G. Polovinkin, B. A. Matveev, A. Yu. Rybal’chenko, N. M. Stus, M. A. Remennyi
Publikováno v:
Semiconductors. 46:247-250
The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and contact size values. It is shown that this non-uniformity is one of the main causes of the poor
Autor:
Yu. P. Yakovlev, Maya P. Mikhailova, I. A. Andreev, M. Yu. Mikhailov, G. G. Konovalov, Evgenii Ivanov, Konstantin D. Moiseev
Publikováno v:
Semiconductors. 45:248-252
Photodetectors for the spectral range 2-4 μm, based on an asymmetric type-II heterostructure p-InAs/AlSb/InAsSb/AlSb/(p, n)-GaSb with a single deep quantum well (QW) or three deep QWs at the heterointerface, have been grown by metal-organic vapor ph
Autor:
Alice Hospodková, Yu. P. Yakovlev, Jiří Pangrác, E. Hulicius, K. D. Moiseev, T. Šimeček, Evgenii Ivanov, M. P. Mikhailova
Publikováno v:
Semiconductors. 44:66-71
Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface are studied. The heterostructures were grown by metalorganic vapor phase epitaxy. Intense positive and ne
Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature
Autor:
Eduard Ivanov, Alica Hospodková, Konstantin Moiseev, Maya Mikhailova, Yury Yakovlev, Jiri Pangrác, Vyacheslav Romanov, T. Šimeček, Eduard Hulicius
Publikováno v:
Physics Procedia. 3(2):1189-1193
Positive and negative luminescence was observed in a type II broken-gap p-InAs/p-GaAsSb heterostructure in the mid-infrared spectral range 3–5 μm at room temperature. Interface-related radiative recombination was provided by Mn acceptor states on
Autor:
B. A. Matveev, A. L. Zakhgeim, M. A. Remennyi, Anton E. Chernyakov, N. M. Stus, Nonna V. Zotova, N. D. Il’inskaya, S. A. Karandashev
Publikováno v:
Semiconductors. 43:394-399
Equilibrium and nonequilibrium IR images of p-InAsSbP/n-InAsSb/n +-InAs photodiodes including the images obtained in the electroluminescence and negative luminescence modes have been analyzed. The contact reflectivity has been evaluated. The influenc