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pro vyhledávání: '"Neelu Shrestha"'
Autor:
Anthony S. Holland, Geoffrey K. Reeves, Mark C Ridgway, Martyn H. Kibel, P. Tanner, Neelu Shrestha, Patrick W. Leech
Publikováno v:
MRS Advances. 2:2903-2908
The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximatel
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 30:257-265
Contact test structures where there is more than one non-metal layer, are significantly more complex to analyse compared to when there is only one such layer like active silicon on an insulating substrate. Here, we use analytical models for complex t