Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Neelesh G"'
Publikováno v:
Journal of Materials Science. 35:6027-6033
The composition-dependent electrical properties in (Pb,La)(Zr,Ti,Sn)O3 antiferroelectric-ferroelectric phase switching thin and thick films have been systematically studied and compared with bulk ceramics. The films were deposited on Pt-buffered sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995762b6639df0e7467416c860e32177
https://doi.org/10.1023/a:1026775701354
https://doi.org/10.1023/a:1026775701354
Publikováno v:
Materials Letters. 34:157-160
Lanthanum doped lead zirconate titanate stannate antiferroelectric thin films with `square' hysteresis loops and zero remanent polarization were prepared, for the first time, from acetic acid-based sol–gel processing. The method has the advantages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0624301e98a2c21436ec73daec265c30
https://doi.org/10.1016/s0167-577x(97)00165-1
https://doi.org/10.1016/s0167-577x(97)00165-1
Publikováno v:
Integrated Ferroelectrics. 22:545-557
Niobium-doped or lanthanum-doped lead zirconate titanate stannate antiferroelectric thin and thick films have been prepared on platinum-buffered silicon substrates by a modified sol-gel method and their electric properties were characterized, with em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04fcb9c3f22ae2783c166868ea6fe506
https://doi.org/10.1080/10584589808208073
https://doi.org/10.1080/10584589808208073
Publikováno v:
Integrated Ferroelectrics. 22:501-513
The purpose of this work was to conduct a systematic study of lanthanum doped lead zirconate stannate titanate (PLSZT) thin films with compositions in the antiferroelectric tetragonal (AFET) and the antiferroelectric orthorhombic (AFEO) region. The e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d3f89843396b659e4f7f41bd6e88602
https://doi.org/10.1080/10584589808208069
https://doi.org/10.1080/10584589808208069
Autor:
Pai, Neelesh G
Thesis (M.B.A.)--Massachusetts Institute of Technology, Sloan School of Management; and, (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science; in conjunction with the Leaders for Manufacturing Program at
Externí odkaz:
http://hdl.handle.net/1721.1/50091
Publikováno v:
Applied Physics Letters. 72:593-595
The charge release speed and backward phase switching time of lanthanum-doped lead zirconate titanate stannate antiferroelectric thin films were investigated by directly measuring the switching current upon removal of the applied electric field. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6fd2b0689ca1abf4058c63d5283e94f
https://doi.org/10.1063/1.120817
https://doi.org/10.1063/1.120817
Publikováno v:
MRS Online Proceedings Library; 1997, Vol. 493 Issue 1, p403-408, 6p
Autor:
Dhivya, Gopi1, Sridharan, K. S.2 sridharan.ks@sriramachandra.edu.in, Reddy, N. Sanjeeva3, Kumar, P. Kennedy1, Ramesh, Arunagiri4, Katta, Divya1
Publikováno v:
Journal of Pure & Applied Microbiology. 2024, Vol. 18 Issue 1, p430-437. 8p.
Publikováno v:
MRS Proceedings. 493
Lanthanum-doped or niobium-doped lead zirconate titanate stannate antiferroelectric thin films with the thickness of about 0.4 μm have been prepared from acetic acid-based or 2-methoxyethanol-based sol-gel method. All the films have the maximum pola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44c466db8fc89014bb288b9533f61a09
https://doi.org/10.1557/proc-493-403
https://doi.org/10.1557/proc-493-403
Publikováno v:
Integrated Ferroelectrics; Mar1998, Vol. 22 Issue 1-4, p545-557, 13p