Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Ned Cahoon"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 655-661 (2020)
This paper presents design and analysis of a 28GHz broadband single-pole double-throw (SPDT) distributed travelling-wave radio-frequency (RF) switch designed in a foundry 22nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. The 28GHz SPD
Externí odkaz:
https://doaj.org/article/cf13c8f8063b4753a13266c6c640c481
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00b1475566a7ce663a3f173178257bb0
https://doi.org/10.1109/icsict55466.2022.9963378
https://doi.org/10.1109/icsict55466.2022.9963378
Autor:
Alvin Joseph, Vibhor Jain, John Pekarik, Ajay Raman, Shafi Syed, Liu Hang, Ned Cahoon, Randy Wolf, Venkat Vanukuru, Elan Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Qizhi Liu, Yves Ngu
Publikováno v:
2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4af9998a4aba9f49e280926b2549787b
https://doi.org/10.1109/bcicts53451.2022.10051743
https://doi.org/10.1109/bcicts53451.2022.10051743
Autor:
Zhixing Zhao, Steffen Lehmann, Wei Lun Oo, Amit Kumar Sahoo, Shafi Syed, Quang Huy Le, Dang Khoa Huynh, Talha Chohan, Dirk Utess, Dominik Kleimaier, Maciej Wiatr, Sabine Kolodinski, Jerome Mazurier, Jan Hoentschel, Andreas Knorr, Ned Cahoon, Stefan Kneitz
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bef3e5c3d875db0c12f48ec8f64e10b
https://doi.org/10.1109/bcicts50416.2021.9682480
https://doi.org/10.1109/bcicts50416.2021.9682480
Publikováno v:
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
A fully-differential, single-pole single-throw (SPST) switch capable of high isolation in broadband CMOS transceivers is described. The SPST switch realizes > 50-dB isolation across DC to 43GHz while maintaining an insertion loss (IL) 1dB ) of the IL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28877896e7410fcbf8696bf346d7718d
https://doi.org/10.1109/rfic49505.2020.9218370
https://doi.org/10.1109/rfic49505.2020.9218370
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:5401-5410
The design considerations and circuit topologies of a family of ultralow-power fundamental-frequency and second-harmonic 60-GHz radar sensors are described. The single-chip sensor architecture features four low-noise-matched receivers, either a funda
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::896feb2ab508e3b9423363288688585f
https://doi.org/10.1109/tmtt.2017.2771261
https://doi.org/10.1109/tmtt.2017.2771261
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:5411-5421
An ultra-broadband I/Q RF-DAC digital wireless transmitter architecture is proposed for 5G terminals and base stations. Broadband 1–32-GHz and tuned 20–32-GHz $2 \times 6$ -bit versions of the transmitter were designed and manufactured in a produ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0942c70f775005ec08940c7c55c61b3e
https://doi.org/10.1109/tmtt.2017.2771457
https://doi.org/10.1109/tmtt.2017.2771457
Autor:
M. Sadegh Dadash, Sorin P. Voinigescu, Andreia Cathelin, Pascal Chevalier, Ned Cahoon, Jurgen Hasch
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:5377-5388
The system and transistor-level design of low-power millimeter wave (mm-wave) active tags in silicon is discussed in detail. Two active mm-wave tags with identical system architecture, padframe, and chip size were designed and fabricated in 55-nm SiG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9d2a363d21ebd65af6df06523ad37a
https://doi.org/10.1109/tmtt.2017.2769079
https://doi.org/10.1109/tmtt.2017.2769079
Publikováno v:
2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond (IMC-5G).
In this paper, we will present the investigation of 5G mm-Wave SPDT maximum sustainable power, Pmax. Maximum sustainable power is a key parameter for switch design. In sub 6GHz switch applications, Pmax is normally defined as the input power that cau
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3222332494b9a990c5147cbecb1a575
https://doi.org/10.1109/imc-5g47857.2019.9160367
https://doi.org/10.1109/imc-5g47857.2019.9160367
Autor:
Arvind Kumar, Xiaowei Tian, Ned Cahoon, Hua Wang, Dawn Wang, Gabriel M. Rebeiz, Alvin J. Joseph, Chaojiang Li, Myra Boenke
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
45nm RFSOI NFET has similar F T /F max as high performance 130nm SiGe NPN and they are both potentially suitable for Ka Band FEM applications. In this paper, we evaluated the Ka band LNA, SPDT, and PA based on both processes. A 28GHz LNA designed wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa318d541d1f62eb01c0ac38f798c6e3
https://doi.org/10.1109/icsict.2018.8565660
https://doi.org/10.1109/icsict.2018.8565660