Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Neculai Plugaru"'
Publikováno v:
Results in Physics, Vol 47, Iss , Pp 106350- (2023)
A study on a parametrized model of a composite barrier ferroelectric tunneling junction (FTJ), three-interface system with a non-polar dielectric layer, under an external bias voltage, Va, and at room temperature, using Finite Element Method-based si
Externí odkaz:
https://doaj.org/article/13c51be924c042a382828bab311b2df1
Autor:
Rodica Plugaru, Iuliana Mihalache, Cosmin Romaniţan, Florin Comanescu, Silviu Vulpe, Gabriel Craciun, Neculai Plugaru, Nikolay Djourelov
Publikováno v:
Sensors, Vol 23, Iss 4, p 1759 (2023)
In this study we analyzed the structure and light-sensing properties of as-deposited vanadium oxide thin films, prepared by RF sputtering in different Ar:O2 flow rate conditions, at low temperature (e.g., 65 °C). X-ray diffraction (XRD), Scanning El
Externí odkaz:
https://doaj.org/article/ce30ed313eb94faa86a0d3912204837d
Autor:
Elham Fakhri, Rodica Plugaru, Muhammad Taha Sultan, Thorsteinn Hanning Kristinsson, Hákon Örn Árnason, Neculai Plugaru, Andrei Manolescu, Snorri Ingvarsson, Halldor Gudfinnur Svavarsson
Publikováno v:
Sensors, Vol 22, Iss 17, p 6340 (2022)
Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon
Externí odkaz:
https://doaj.org/article/3cb0735afef64a8ab41d83724bb990b3
Publikováno v:
Nanomaterials, Vol 12, Iss 10, p 1682 (2022)
The success of a ferroelectric tunnel junction (FTJ) depends on the asymmetry of electron tunneling as given by the tunneling electroresistance (TER) effect. This characteristic is mainly assessed considering three transport mechanisms: direct tunnel
Externí odkaz:
https://doaj.org/article/188467fd0f8d43c596f1208303980e66
Publikováno v:
New Journal of Physics, Vol 21, Iss 11, p 113005 (2019)
The fundamental phenomena at ferroelectric interfaces have been the subject of thorough theoretical and computational studies due to their usefulness in a large variety of emergent electronic devices, solar cells and catalysts. Ferroelectricity deter
Externí odkaz:
https://doaj.org/article/78f196d380d74f13a60048757b6bda62
Publikováno v:
2022 International Semiconductor Conference (CAS).
Autor:
H. G. Svavarsson, M. T. Sultan, S. Ingvarsson, Andrei Manolescu, Neculai Plugaru, R. Plugaru, E. Fakhri
Publikováno v:
2021 International Semiconductor Conference (CAS).
Silicon nanowires (SiNWs) hold potential applications in optoelectronics and SiNW-based optical sensors. Here, a photoluminescence study of SiNW arrays fabricated with a simple two-step silver (Ag) catalyzed etching of silicon wafers is presented. Th
Publikováno v:
International Journal of Quantum Chemistry. 120
Autor:
Ioana Pintilie, Andrei Manolescu, Lucian Pintilie, George Alexandru Nemnes, Keith T. Butler, Neculai Plugaru, L. D. Filip
Publikováno v:
Plugaru, N, Nemnes, G A, Filip, L, Pintilie, I, Pintilie, L, Butler, K T & Manolescu, A 2017, ' Atomistic Simulations of Methylammonium Lead Halide Layers on PbTiO 3 (001) Surfaces ', Journal of Physical Chemistry C, vol. 121, no. 17, pp. 9096-9109 . https://doi.org/10.1021/acs.jpcc.7b00399
The substantial increase in the power conversion efficiency of hybrid perovskite solar cells, to date reaching more than 20% in the laboratory, has strongly motivated research on this class of organic-inorganic materials and related devices, particul
Autor:
Lucian Pintilie, Laura Elena Abramiuc, George Alexandru Nemnes, Marian Sima, Andrei Gabriel Tomulescu, Neculai Plugaru, Cristina Besleaga, H. G. Svavarsson, Mihaiela Iliescu, V. Stancu, Andrei Manolescu, Ioana Pintilie, L. M. Trinca
Publikováno v:
The Journal of Physical Chemistry Letters. 7:5168-5175
We monitored the evolution in time of pinhole-free structures based on FTO/TiO2/CH3NH3PbI2.6Cl0.4 layers, with and without spiro-OMeTAD and counter electrodes (Ag, Mo/Ag, and Au), aged at 24 °C in a dark nitrogen atmosphere. In the absence of electr