Resonant Raman scattering on graphene: SERS and gap-mode TERS.

Autor: Kurus NN; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru., Kalinin V; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Milekhin IA; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Antonova IV; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Rodyakina EE; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Milekhin AG; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru., Latyshev AV; Rzhanov Institute of Semiconductor Physics (SBRAS) Lavrentjev av. 13 Novosibirsk 630090 Russia ifp@isp.nsc.ru.; Novosibirsk State University Pirogov str. 1 Novosibirsk 630090 Russia., Zahn DRT; Semiconductor Physics and Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology Reichenhainer Str. 70 D-09107 Chemnitz Germany zahn@physik.tu-chemnitz.de.

Publikováno v: RSC advances [RSC Adv] 2024 Jan 23; Vol. 14 (6), pp. 3667-3674. Date of Electronic Publication: 2024 Jan 23 (Print Publication: 2024).

Visualization of Swift Ion Tracks in Suspended Local Diamondized Few-Layer Graphene.

Autor: Nebogatikova NA; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, Novosibirsk 630090, Russia., Antonova IV; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, Novosibirsk 630090, Russia.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, Novosibirsk 630087, Russia., Gutakovskii AK; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, Novosibirsk 630090, Russia.; Physical Department, Novosibirsk State University, Novosibirsk 630090, Russia., Smovzh DV; Kutateladze Institute of Thermophysics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk 630090, Russia., Volodin VA; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, Novosibirsk 630090, Russia.; Physical Department, Novosibirsk State University, Novosibirsk 630090, Russia., Sorokin PB; Technological Institute for Superhard and Novel Carbon Materials, Moscow 108840, Russia.

Publikováno v: Materials (Basel, Switzerland) [Materials (Basel)] 2023 Feb 07; Vol. 16 (4). Date of Electronic Publication: 2023 Feb 07.

Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics.

Autor: Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Shavelkina MB; Joint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, Russia., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia., Poteryaev DA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia., Buzmakova AA; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Soots RA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia., Katarzhis VA; Joint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, Russia.

Publikováno v: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 May 17; Vol. 12 (10). Date of Electronic Publication: 2022 May 17.

Fluorinated graphene nanoparticles with 1-3 nm electrically active graphene quantum dots.

Autor: Nebogatikova NA; Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the RAS, Novosibirsk, Russia. Novosibirsk State University, Novosibirsk, Russia., Antonova IV, Ivanov AI, Demin VA, Kvashnin DG, Olejniczak A, Gutakovskii AK, Kornieieva KA, Renault PLJ, Skuratov VA, Chernozatonskii LA

Publikováno v: Nanotechnology [Nanotechnology] 2020 May 01; Vol. 31 (29), pp. 295602. Date of Electronic Publication: 2020 Mar 26.

Graphene-PEDOT: PSS Humidity Sensors for High Sensitive, Low-Cost, Highly-Reliable, Flexible, and Printed Electronics.

Autor: Popov VI; Institute of Physics and Technologies, North-Eastern Federal University, Yakutsk 677027, Russia. volts@mail.ru., Kotin IA; Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia. kotin@isp.nsc.ru., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia. nadonebo@gmail.com.; Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia. nadonebo@gmail.com., Smagulova SA; Institute of Physics and Technologies, North-Eastern Federal University, Yakutsk 677027, Russia. smagulova@mail.ru., Antonova IV; Rzhanov Institute of Semiconductor Physics, Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, Novosibirsk 630073, Russia. antonova@isp.nsc.ru.

Publikováno v: Materials (Basel, Switzerland) [Materials (Basel)] 2019 Oct 24; Vol. 12 (21). Date of Electronic Publication: 2019 Oct 24.