Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Neal Lafferty"'
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Neal Lafferty, Sagar Saxena, Keisuke Mizuuchi, Yuansheng Ma, Xima Zhang, Pat Lacour, Alex Tritchkov, Farah Huq Kmiec, John Sturtevant
Publikováno v:
DTCO and Computational Patterning II.
Autor:
Ana-Maria Armeanu, Evgeny Malankin, Neal Lafferty, Chih-I Wei, Monica Sears, Germain Fenger, Xima Zhang, Werner Gillijns, Darko Trivkovic, Ryan Ryoung-Han Kim, Jeonghoon Lee
Publikováno v:
DTCO and Computational Patterning II.
Autor:
Jeonghoon Lee, Sandip Halder, Van Tuong Pham, Roberto Fallica, Seonggil Heo, Kaushik Sah, Hyo Seon Suh, Victor Blanco, Werner Gillijns, Andrew Cross, Ethan Maguire, Ana-Maria Armeanu, Vladislav Liubich, Evgeny Malankin, Xima Zhang, Monica Kempsell Sears, Neal Lafferty, Germain Fenger, Chih-I Wei, Ryoung Han Kim
Publikováno v:
DTCO and Computational Patterning II.
Single mask solution to pattern BLP and SNLP using 0.33NA EUV for next-generation DRAM manufacturing
Autor:
Kaushik Sah, Andrew Cross, Sayantan Das, Roberto Fallica, Jeonghoon Lee, Ryan Ryoung Kim, Sandip Halder, Ethan Maguire, Ana-Maria Armeanu, Monica Sears, Neal Lafferty, Vlad Liubich, Chih-i Wei, Germain Fenger
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Autor:
Sayantan Das, Kaushik Sah, Roberto Fallica, Zhijin Chen, Sandip Halder, Andrew Cross, Danilo De Simone, Fergo Treska, Philippe Leray, Ryoung Han Kim, Ethan Maguire, Chih-I Wei, Germain Fenger, Neal Lafferty, Jeonghoon Lee
Publikováno v:
Advances in Patterning Materials and Processes XXXIX.
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
For years, Moore’s law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source’s wave length and the smallest resolvable dimension, mandated
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
The 5nm technology node introduces more aggressive geometries than previous nodes. In this paper, we are introducing a comprehensive study to examine the pattering limits of EUV at 0.33NA. The study is divided into two main approaches: (A) Exploring
Autor:
Ananthan Raghunathan, Germain Fenger, John L. Sturtevant, Shumay Shang, Lianghong Yin, Neal Lafferty
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
In previous work, we have described how EUV scanner aberrations can be adequately simulated and corrected in OPC across the slit to deliver excellent edge placement control. The problem is that the level of aberration variability from tool to tool is
Autor:
Ao Chen, Chris McGinty, Neal Lafferty, Hussein Ali, Ioana Graur, Mohamed Bahnas, Kareem Madkour, Dan Schumacher, Jason Meiring, Ayman Hamouda
Publikováno v:
SPIE Proceedings.
State-of-the-art OPC recipes for production semiconductor manufacturing are fine-tuned, often artfully crafted parameter sets are designed to achieve design fidelity and maximum process window across the enormous variety of patterns in a given design