Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Nayan C. Das"'
Publikováno v:
Nanomaterials, Vol 13, Iss 6, p 1127 (2023)
The effects of electrode materials (top and bottom) and the operating ambiances (open-air and vacuum) on the MgFx-based resistive random-access memory (RRAM) devices are studied. Experiment results show that the device’s performance and stability d
Externí odkaz:
https://doaj.org/article/a9256945f2a34f31822bc4c1d3e8d9b0
Publikováno v:
Micromachines, Vol 13, Iss 4, p 604 (2022)
This study investigates the switching characteristics of the silicon oxynitride (SiOxNy)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances at temperatures ranging from 300 K to 77 K. The operating ambiances
Externí odkaz:
https://doaj.org/article/11ff4331411d4ce79b83b696d34a1575
Publikováno v:
Nanomaterials, Vol 12, Iss 4, p 605 (2022)
This study investigates switching characteristics of the magnesium fluoride (MgFx)-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances (open-air and vacuum). Operating ambiances alter the elemental composition
Externí odkaz:
https://doaj.org/article/0868fcf64a3545aeb5bde48d28c652b8
Publikováno v:
Micromachines, Vol 12, Iss 9, p 1049 (2021)
Electroforming-free resistive switching random access memory (RRAM) devices employing magnesium fluoride (MgFx) as the resistive switching layer are reported. The electroforming-free MgFx based RRAM devices exhibit bipolar SET/RESET operational chara
Externí odkaz:
https://doaj.org/article/fe5988e3d5f847c09f3f52d587888736
Publikováno v:
Applied Sciences, Vol 10, Iss 10, p 3506 (2020)
Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiOxNy) thin film as a resistive switching layer. A SiOxNy layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The
Externí odkaz:
https://doaj.org/article/d788086849b24be0aef9835fb6957daa
Publikováno v:
Carbon. 195:174-182
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8addae9ccfd2df2033c9581ac14edf59
https://doi.org/10.1016/j.carbon.2022.04.016
https://doi.org/10.1016/j.carbon.2022.04.016
Publikováno v:
Nanoscale. 14(10)
This study investigates the temperature-independent switching characteristics of magnesium fluoride (MgFx) based bipolar resistive memory devices at temperatures ranging from 300 K down to 77 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26cbb94d6388e27d760b4e7a216ded29
https://pubmed.ncbi.nlm.nih.gov/35187553
https://pubmed.ncbi.nlm.nih.gov/35187553
Publikováno v:
Applied Sciences, Vol 10, Iss 3506, p 3506 (2020)
Applied Sciences
Volume 10
Issue 10
Applied Sciences
Volume 10
Issue 10
Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiOxNy) thin film as a resistive switching layer. A SiOxNy layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89f70c9d64eceb53bf04e039c731c3f3
https://www.mdpi.com/2076-3417/10/10/3506
https://www.mdpi.com/2076-3417/10/10/3506
Autor:
Se-I Oh, Yun-Sung Lee, Nayan C. Das, J. R. Rani, Ranjith Thangavel, So-Yeon Kim, Jae-Hyung Jang, Jeong Min Woo
Publikováno v:
ACS applied materialsinterfaces. 9(27)
The low volumetric energy density of reduced graphene oxide (rGO)-based electrodes limits its application in commercial electrochemical energy storage devices that require high-performance energy storage capacities in small volumes. The volumetric en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7fde99a497aa440cb5e97430338e75a8
https://pubmed.ncbi.nlm.nih.gov/28613816
https://pubmed.ncbi.nlm.nih.gov/28613816