Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Nawapong Unsuree"'
Autor:
Nawapong Unsuree, Sorasak Phanphak, Pongthep Prajongtat, Aritsa Bunpheng, Kulpavee Jitapunkul, Pornpis Kongputhon, Pannaree Srinoi, Pawin Iamprasertkun, Wisit Hirunpinyopas
Publikováno v:
Energies, Vol 14, Iss 18, p 5819 (2021)
Ion transport is a significant concept that underlies a variety of technologies including membrane technology, energy storages, optical, chemical, and biological sensors and ion-mobility exploration techniques. These applications are based on the con
Externí odkaz:
https://doaj.org/article/5cabd69cbb934aa8ae25cf2ffab1fc7d
Autor:
Wisit Hirunpinyopas, Nawapong Unsuree, Pornpis Kongputhon, Pongthep Prajongtat, Pannaree Srinoi, Pawin Iamprasertkun, Aritsa Bunpheng, Kulpavee Jitapunkul, Sorasak Phanphak
Publikováno v:
Energies, Vol 14, Iss 5819, p 5819 (2021)
Ion transport is a significant concept that underlies a variety of technologies including membrane technology, energy storages, optical, chemical, and biological sensors and ion-mobility exploration techniques. These applications are based on the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::627e8db2f7bc20bcbce69fc777ca09d2
https://www.mdpi.com/1996-1073/14/18/5819
https://www.mdpi.com/1996-1073/14/18/5819
Autor:
Michael Crabb, Patrick Parkinson, Juan Arturo Alanis, H. Selvi, Nawapong Unsuree, Tim Echtermeyer
The design of efficient graphene-silicon (GSi) Schottky junction photodetectors requires detailed understanding of the spatial origin of the photoresponse. Scanning-photocurrent-microscopy (SPM) studies have been carried out in the visible wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfa561b011d72a77188bf24179e5b845
Publikováno v:
2018 20th International Conference on Electronic Materials and Packaging (EMAP).
Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 40
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70b218560de01bc2fc78b5472b3c88e0
https://doi.org/10.1109/emap.2018.8660882
https://doi.org/10.1109/emap.2018.8660882
Autor:
Hakan Selvi, Nawapong Unsuree, Eric Whittaker, Matthew P. Halsall, Ernie W. Hill, Andrew Thomas, Patrick Parkinson, Tim J. Echtermeyer
Publikováno v:
Selvi, H, Unsuree, N, Whittaker, E, Halsall, M, Hill, E, Thomas, A, Parkinson, P & Echtermeyer, T 2018, ' Towards Substrate Engineering of Graphene-Silicon Schottky Diode Photodetectors ', Nanoscale, vol. 10, no. 7, pp. 3399-3409 . https://doi.org/10.1039/c7nr09591k
Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0b031d4652915c3995ed4ff24ddae60
http://arxiv.org/abs/1706.09042
http://arxiv.org/abs/1706.09042