Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Navya S. Garigapati"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:3762-3767
In0.71Ga0.29As/InP (12/2 nm) quantum well MOSFETs using sacrificial amorphous silicon (a:Si) spacers to achieve low parasitic capacitance are fabricated. Radio frequency characterization of 73 devices is used to study the intrinsic and extrinsic capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c61858a609eb31472a5638ee3c30d85
https://doi.org/10.1109/ted.2021.3092299
https://doi.org/10.1109/ted.2021.3092299
