Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Navya S. Garigapati"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:3762-3767
In0.71Ga0.29As/InP (12/2 nm) quantum well MOSFETs using sacrificial amorphous silicon (a:Si) spacers to achieve low parasitic capacitance are fabricated. Radio frequency characterization of 73 devices is used to study the intrinsic and extrinsic capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c61858a609eb31472a5638ee3c30d85
https://doi.org/10.1109/ted.2021.3092299
https://doi.org/10.1109/ted.2021.3092299
Publikováno v:
IEEE Transactions on Electron Devices; Aug2021, Vol. 68 Issue 8, p3762-3767, 6p
Publikováno v:
Applied Physics Letters; 7/15/2019, Vol. 115 Issue 3, pN.PAG-N.PAG, 5p, 2 Diagrams, 3 Graphs