Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Navneet Kaur Saini"'
Autor:
Ajay Kumar Visvkarma, null Chanchal, Chandan Sharma, Navneet Kaur Saini, Manoj Saxena, Robert Laishram, D S Rawal
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::270b09a25747054f4202ec65751e10f8
https://doi.org/10.1109/icee50728.2020.9777042
https://doi.org/10.1109/icee50728.2020.9777042
Publikováno v:
IEEE Transactions on Electron Devices. 64:4561-4567
A novel In0.53Ga0.47As/InP heterostructure trench-gate power MOSFET employing impact ionization at the hetero junction of n− In0.53Ga0.47As drift region and n+InP drain region has been proposed. The impact ionization supports the band-to-band tunne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b67f75eedb1bcc294f4c31bb7b119bd7
https://doi.org/10.1109/ted.2017.2754404
https://doi.org/10.1109/ted.2017.2754404
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319976037
A new In0.53Ga0.47As based laterally diffused power MOSFET (LDMOS) with the tunneling junction at the drain side has been proposed. The tunneling mechanism increases the drain current which results in reduced ON state resistance and increased peak tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f79bb66b240439ea760b3fe351afd54
https://doi.org/10.1007/978-3-319-97604-4_102
https://doi.org/10.1007/978-3-319-97604-4_102
Publikováno v:
Infrared Physics & Technology. 67:58-62
We propose a novel sub circuit model to simulate HgCdTe infrared photodiodes in a circuit simulator, like PSPICE. We have used two diodes of opposite polarity in parallel to represent the forward biased and the reverse biased behavior of an HgCdTe ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b6d90d696632f036db141e76041be2b
https://doi.org/10.1016/j.infrared.2014.07.003
https://doi.org/10.1016/j.infrared.2014.07.003
Publikováno v:
ICACCI
As we are migrating toward low supply voltages, the threshold and supply voltage fluctuations will begin to have larger impact on the speed and power specification of SRAMs. Here, we present different techniques which minimize the effect of operating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a368f64f71c740b84af2ef04c176b4ff
https://doi.org/10.1109/icacci.2016.7732415
https://doi.org/10.1109/icacci.2016.7732415
Autor:
V. Venkataraman, Ravinder Pal, R.K. Bhan, Raghvendra Sahai Saxena, K. P. Singh, L. Sareen, Navneet Kaur Saini, Renu Sharma, Vanya Srivastav
Publikováno v:
Journal of Electronic Materials. 42:389-397
CdTe thin films of 500 thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal-insulator-metal (MIM) capacitors were fabricated using these films as a dielectric. These films have many po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d69df1f3a5f04a57731d867ab4e32a8a
https://doi.org/10.1007/s11664-012-2344-7
https://doi.org/10.1007/s11664-012-2344-7
Publikováno v:
IEEE Sensors Journal. 11:920-924
In this paper, we present the analysis of the crosstalk limitation in 2-D resistive sensor arrays that utilize shared row and column connections for simplified interconnections. The mathematical expression for crosstalk among all of the elements intr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61d8f778ec4e9962e032d62221ee8bcf
https://doi.org/10.1109/jsen.2010.2063699
https://doi.org/10.1109/jsen.2010.2063699
Publikováno v:
Infrared Physics & Technology. 54:379-381
Hg 1− x Cd x Te Metal–Insulator–Semiconductor (MIS) capacitors were studied both experimentally and theoretically to investigate the capacitance contributions due to band-to-band (btb) tunnelling and generation–recombination (gr) of carriers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::749717954f6781f347f21b51c794aad5
https://doi.org/10.1016/j.infrared.2011.05.001
https://doi.org/10.1016/j.infrared.2011.05.001
Publikováno v:
Physics of Semiconductor Devices ISBN: 9783319030012
In this paper we model the current voltage (I–V) characteristics of Hg1 − xCdxTe (x = 0.3) diodes at high reverse bias voltage. The breakdown characteristics are indicative of n+/n−/p kind of doping profile. Various current limiting mechanisms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8990cb7e15296c07e21486430387086b
https://doi.org/10.1007/978-3-319-03002-9_227
https://doi.org/10.1007/978-3-319-03002-9_227