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pro vyhledávání: '"Naveen Prasath Vellingiri"'
Publikováno v:
2021 43rd Annual EOS/ESD Symposium (EOS/ESD).
Latchup behavior in parasitic SCR detector structures with grounded N-Well (GNW) were studied, wherein GNW implies N-Wells biased at 0 V. The impact of design parameters such as injector to detector spacing, GNW to nearby Nwell (of a PMOS) distance,