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pro vyhledávání: '"Naushad K. Variam"'
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:488
The most critical parameter for deep submicron metal–oxide–semiconductor (MOS) field effect transistors (MOSFETs) is the threshold voltage (VT). The device VT is highly dependent on processing; specifically, the ion implanted channel-doping profi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::574d8ef499f62cfce5ea6cba8b361918
https://doi.org/10.1116/1.1424284
https://doi.org/10.1116/1.1424284
