Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Nattapol Damrongplasit"'
Autor:
Riu Cherdchusakulchai, Sucharn Thoumrungroje, Thanyaporn Tungpanjasil, Alongkorn Pimpin, Werayut Srituravanich, Nattapol Damrongplasit
Publikováno v:
IEEE Access, Vol 12, Pp 84363-84373 (2024)
Accurate anthropometric measurements are critical in the healthcare industry for effective diagnosis and patient monitoring. Standardized procedures for measuring human body dimensions are required to ensure accuracy, reliability, and consistency acr
Externí odkaz:
https://doaj.org/article/0f0165d4f8cb45b2aac44ab3427d0c7f
Publikováno v:
Sensors, Vol 24, Iss 11, p 3328 (2024)
The self-sensing technology of microactuators utilizes a smart material to concurrently actuate and sense in a closed-loop control system. This work aimed to develop a position feedback-control system of nickel electrothermal microactuators using a r
Externí odkaz:
https://doaj.org/article/b9ccb3b51f7e4f75bdeb74ee06b1b653
Autor:
Wei-Chen Lien, Nattapol Damrongplasit, John H. Paredes, Debbie G. Senesky, Tsu-Jae K. Liu, Albert P. Pisano
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 6, Pp 164-167 (2014)
Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600°C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to
Externí odkaz:
https://doaj.org/article/ec0cee0a0010495e94845a0350195f4b
Publikováno v:
2022 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia).
Publikováno v:
2022 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia).
Autor:
Pachara Noosawat, Werayut Srituravanich, Nattapol Damrongplasit, Yuji Suzuki, Morakot Kaewthamasorn, Alongkorn Pimpin
Publikováno v:
Microfluidics and Nanofluidics. 26
Autor:
Pittaya Supanirattisai, Kongpop U-Yen, Alongkorn Pimpin, Werayut Srituravanich, Nattapol Damrongplasit
Publikováno v:
2022 37th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC).
Autor:
Janistar Sakpatitha, Alongkorn Pimpin, Werayut Srituravanich, Tanapat Palaga, Nattapol Damrongplasit
Publikováno v:
2021 IEEE 3rd Eurasia Conference on Biomedical Engineering, Healthcare and Sustainability (ECBIOS).
Diabetes is a leading cause of disability and death. Moreover, it has a huge social and economic impact. Patients with diabetes have a better quality of life when they receive insulin properly than without it. However, some diabetic patients have try
Publikováno v:
IEEE Transactions on Electron Devices. 62:1119-1126
A physically based variability model is developed to explain threshold voltage ( $V_{T}$ ) and drain-induced barrier lowering (DIBL) variations, and their correlations for static RAMs (SRAMs) and analog devices fabricated in a 32-nm high- $K$ metal-g
Publikováno v:
IEEE Transactions on Electron Devices. 61:3949-3954
This paper benchmarks the performance of gate-all-around (GAA) MOSFETs against that of optimized silicon-on-insulator FinFETs at 10-nm gate length. Variability in transistor performance due to systematic and random variations is estimated with the ai