Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Nattapol Damrongplasit"'
Autor:
Riu Cherdchusakulchai, Sucharn Thoumrungroje, Thanyaporn Tungpanjasil, Alongkorn Pimpin, Werayut Srituravanich, Nattapol Damrongplasit
Publikováno v:
IEEE Access, Vol 12, Pp 84363-84373 (2024)
Accurate anthropometric measurements are critical in the healthcare industry for effective diagnosis and patient monitoring. Standardized procedures for measuring human body dimensions are required to ensure accuracy, reliability, and consistency acr
Externí odkaz:
https://doaj.org/article/0f0165d4f8cb45b2aac44ab3427d0c7f
Publikováno v:
Sensors, Vol 24, Iss 11, p 3328 (2024)
The self-sensing technology of microactuators utilizes a smart material to concurrently actuate and sense in a closed-loop control system. This work aimed to develop a position feedback-control system of nickel electrothermal microactuators using a r
Externí odkaz:
https://doaj.org/article/b9ccb3b51f7e4f75bdeb74ee06b1b653
Autor:
Wei-Chen Lien, Nattapol Damrongplasit, John H. Paredes, Debbie G. Senesky, Tsu-Jae K. Liu, Albert P. Pisano
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 2, Iss 6, Pp 164-167 (2014)
Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600°C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to
Externí odkaz:
https://doaj.org/article/ec0cee0a0010495e94845a0350195f4b
Publikováno v:
2022 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdafb80239f56f1c79081f9615926ef0
https://doi.org/10.1109/icce-asia57006.2022.9954656
https://doi.org/10.1109/icce-asia57006.2022.9954656
Publikováno v:
2022 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e07c6323adf5cddbcab690b379659f26
https://doi.org/10.1109/icce-asia57006.2022.9954650
https://doi.org/10.1109/icce-asia57006.2022.9954650
Autor:
Pachara Noosawat, Werayut Srituravanich, Nattapol Damrongplasit, Yuji Suzuki, Morakot Kaewthamasorn, Alongkorn Pimpin
Publikováno v:
Microfluidics and Nanofluidics. 26
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::132f6a89d8338c02b00469e5e6d87414
https://doi.org/10.1007/s10404-022-02583-7
https://doi.org/10.1007/s10404-022-02583-7
Autor:
Pittaya Supanirattisai, Kongpop U-Yen, Alongkorn Pimpin, Werayut Srituravanich, Nattapol Damrongplasit
Publikováno v:
2022 37th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd4e3853d420b3cf1484e4c854746832
https://doi.org/10.1109/itc-cscc55581.2022.9894956
https://doi.org/10.1109/itc-cscc55581.2022.9894956
Autor:
Janistar Sakpatitha, Alongkorn Pimpin, Werayut Srituravanich, Tanapat Palaga, Nattapol Damrongplasit
Publikováno v:
2021 IEEE 3rd Eurasia Conference on Biomedical Engineering, Healthcare and Sustainability (ECBIOS).
Diabetes is a leading cause of disability and death. Moreover, it has a huge social and economic impact. Patients with diabetes have a better quality of life when they receive insulin properly than without it. However, some diabetic patients have try
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::232cc08e2460658289d352586be1ed51
https://doi.org/10.1109/ecbios51820.2021.9510681
https://doi.org/10.1109/ecbios51820.2021.9510681
Publikováno v:
IEEE Transactions on Electron Devices. 62:1119-1126
A physically based variability model is developed to explain threshold voltage ( $V_{T}$ ) and drain-induced barrier lowering (DIBL) variations, and their correlations for static RAMs (SRAMs) and analog devices fabricated in a 32-nm high- $K$ metal-g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d15119c05e1d4efa786c5e54f62d2b8
https://doi.org/10.1109/ted.2015.2408215
https://doi.org/10.1109/ted.2015.2408215
Publikováno v:
IEEE Transactions on Electron Devices. 61:3949-3954
This paper benchmarks the performance of gate-all-around (GAA) MOSFETs against that of optimized silicon-on-insulator FinFETs at 10-nm gate length. Variability in transistor performance due to systematic and random variations is estimated with the ai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3b957293ae2422b5ea280549df568d
https://doi.org/10.1109/ted.2014.2360351
https://doi.org/10.1109/ted.2014.2360351