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Publikováno v:
2015 12th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON).
We have demonstrated the fabrication of lateral InAs quantum dot molecules (QDMs) on InGaAs square-like nanohole templates by 2-step growth technique using solid-source molecular beam epitaxy (MBE). In this work, the first step of fabrication process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9de06359f4308768ed076947bd65d51e
https://doi.org/10.1109/ecticon.2015.7206948
https://doi.org/10.1109/ecticon.2015.7206948
Publikováno v:
2015 12th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications & Information Technology (ECTI-CON); 2015, p1-4, 4p
Autor:
Khoklang, Kamonchanok, Thainoi, Supachok, Panyakeow, Somsak, Kiravittaya, Suwit, Ratanathammaphan, Somchai
Publikováno v:
2015 12th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications & Information Technology (ECTI-CON); 2015, p1-4, 4p