Zobrazeno 1 - 10
of 74
pro vyhledávání: '"Natsuro Tsubouchi"'
Publikováno v:
The Review of Laser Engineering. 33:181-188
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e806783ba055c501db85dec95c5dd3
https://doi.org/10.2184/lsj.33.181
https://doi.org/10.2184/lsj.33.181
Autor:
T. Nishimura, S. Maeda, Shigeto Maegawa, Natsuro Tsubouchi, Shoichi Miyamoto, Takashi Ipposhi, Hirotada Itami Kuriyama
Publikováno v:
IEEE Transactions on Electron Devices. 46:1693-1698
A lightly doped drain (LDD) structure was used in a gate-all-around TFT (GAT). This suppresses the leakage current much more than the LDD used in a single-gate TFT (SGT), and the current level of the GAT with the LDD is almost the same as that of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74d497e44484d03051d94cc19e62cd46
https://doi.org/10.1109/16.777158
https://doi.org/10.1109/16.777158
Performance and reliability improvements in poly-Si TFT's by fluorine implantation into gate poly-Si
Autor:
Takashi Ipposhi, M. Ashida, S. Maeda, Hisayuki Nishimura, Shigeto Maegawa, Y. Inoue, O. Tanina, T. Ichiki, T. Nishimura, Natsuro Tsubouchi
Publikováno v:
IEEE Transactions on Electron Devices. 42:1106-1112
High-performance and high-reliability TFT's have been obtained using a fluorine ion implantation technique. The fluorine implantation into the gate poly-Si of TFT caused a positive Vth shift, increased the ON current, and decreased the leakage curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2dd4505c7fb136e67079a1c249ce938
https://doi.org/10.1109/16.387244
https://doi.org/10.1109/16.387244
Publikováno v:
Sensors and Actuators A: Physical. 22:451-455
The technologies for improving the photoyield of a Schottky-barrier detector and enlarging the effective photodetection area per pixel are discussed for realizing a high-density infrared image sensor with video quality. The design and performance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ef194e8a66f6b4acb47badc9cabeed5
https://doi.org/10.1016/0924-4247(89)80013-5
https://doi.org/10.1016/0924-4247(89)80013-5
Publikováno v:
1985 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
A description of a vertical charge transfer that makes it possible to narrow the channel width to the size of the lithographic limit without degradation of charge handling capacity of the vertical charge transfer will be presented. The array size of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::369fd7c59a59f578688019dec48ebae1
https://doi.org/10.1109/isscc.1985.1156786
https://doi.org/10.1109/isscc.1985.1156786
Autor:
S. Maeda, Natsuro Tsubouchi, O. Tanina, M. Ashida, Hisayuki Nishimura, T. Ichiki, T. Ipposhi, Y. Inoue, T. Nishimura, Shigeto Maegawa
Publikováno v:
Proceedings of IEEE International Electron Devices Meeting.
High-performance and high-reliability TFTs were obtained using a fluorine ion implantation (FII) technique. The FII into the TFT gate poly-Si caused a positive Vth shift, increased the on current and decreased the leakage current significantly. Our i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e139e182ccae810884c7588e14e86cb2
https://doi.org/10.1109/iedm.1993.347403
https://doi.org/10.1109/iedm.1993.347403
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
A novel EEPROM cell structure is proposed, which realizes a small cell size of 9.72 mu m/sup 2/ by using 0.8- mu m minimum feature size. The cell fabricated has sufficient cell threshold windows which extend to more than 5 V and program cell current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b540a06d9dab9b247eb722072273a3fd
https://doi.org/10.1109/iedm.1991.235445
https://doi.org/10.1109/iedm.1991.235445
Publikováno v:
SPIE Proceedings.
PtSi Schottky-barrier (SB) FPAs have been developed for ground-based thermal imaging and spaceborne remote sensing applications, making the best possible use of its process compatibility with Si LSIs. The FPAs for mid wavelength IR thermal imaging ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90519dd1d5a1d3f526debab18e2062ab
https://doi.org/10.1117/12.317841
https://doi.org/10.1117/12.317841
Autor:
Natsuro Tsubouchi, Shigenobu Maeda, O. Tanina, Hirotada Kuriyama, Y. Inoue, Takashi Ipposhi, Shigeto Maegawa, Hisayuki Nishimura
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4f777f03fb873d92dd5cbba7862bf97
https://doi.org/10.7567/ssdm.1994.a-12-2
https://doi.org/10.7567/ssdm.1994.a-12-2
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9e053a28b3ed91fb809379fc70f632a
https://doi.org/10.7567/ssdm.1994.pa-4-9
https://doi.org/10.7567/ssdm.1994.pa-4-9