Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Natsuo Tatsumi"'
Autor:
Hiroshige Deguchi, Tsukasa Hayashi, Hiroya Saito, Yoshiki Nishibayashi, Minori Teramoto, Masanori Fujiwara, Hiroki Morishita, Norikazu Mizuochi, Natsuo Tatsumi
Publikováno v:
Applied Physics Express.
We developed a compact and portable measuring instrument using diamond NV centers that operates on the USB 3.0 power supply of a laptop computer. Its portability are achieved by the low power consumption of the optics, realized by the diamond corner
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59f8083d63f7bfa5e79d5e0d30bb8c0f
https://doi.org/10.35848/1882-0786/acd836
https://doi.org/10.35848/1882-0786/acd836
Publikováno v:
Diamond and Related Materials. 83:104-108
The luminescence of triboplasma during diamond polishing was investigated. The main luminescence in the ultraviolet range came from N2 molecules in the air. The colors of the visible range of triboplasma were the same as those observed in the photolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac674296560f93a73b0d68f33f26b84
https://doi.org/10.1016/j.diamond.2018.01.018
https://doi.org/10.1016/j.diamond.2018.01.018
Publikováno v:
Journal of Crystal Growth. 458:27-30
The behavior of dislocation lines (DLs) and stacking faults (SFs) in synthetic type-IIa single-crystalline diamond at high temperatures under normal pressure has been investigated. After annealing the diamond at 1500 °C for 60 min in pure N 2 atmosp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8576460069f68f93e67f7876ae1ffbd4
https://doi.org/10.1016/j.jcrysgro.2016.10.033
https://doi.org/10.1016/j.jcrysgro.2016.10.033
Publikováno v:
Diamond and Related Materials. 63:80-85
The polishing mechanisms and surface damages of mechanically and chemically polished diamond crystals were investigated. A metal bonded diamond wheel was used for mechanical polishing, while an SiO 2 wheel was used for chemical polishing. After polis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e97032ecb7af29eb371dae9906198182
https://doi.org/10.1016/j.diamond.2015.11.021
https://doi.org/10.1016/j.diamond.2015.11.021
Publikováno v:
Diamond and Related Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5dd34c489280bb2cdb0dd32f30029b5
https://doi.org/10.1016/j.diamond.2017.01.005
https://doi.org/10.1016/j.diamond.2017.01.005
Publikováno v:
Diamond and Related Materials. 40:56-59
The leakage current of pseudo-vertical-type diamond Schottky barrier diodes (SBDs) was analyzed using a defect visualization technique. Even under a low electrical field, 50% of the fabricated diamond SBDs exhibited a high leakage current that cannot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d968b1225327b5340dc16e2137020d3a
https://doi.org/10.1016/j.diamond.2013.09.011
https://doi.org/10.1016/j.diamond.2013.09.011
Publikováno v:
Japanese Journal of Applied Physics. 57:105503
We have grown a high-quality type-IIa single-crystal diamond substrate, which had a large (001) growth sector with a dislocation-free area of 3.5 × 3.5 mm2, and strong free exciton (FE) emissions were observed by cathodoluminescence (CL), while disl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3824fcedbbd170c025c903ca9b80452d
https://doi.org/10.7567/jjap.57.105503
https://doi.org/10.7567/jjap.57.105503
Publikováno v:
Materials Science Forum. :1003-1006
Device size scaling of pseudo-vertical diamond Schottky barrier diodes (SBDs) has been characterized for high-power device applications based on the control of doping concentration and thickness of the p- CVD diamond layer. Decreasing parasitic resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e998b0dd160e78503089d8199a2e84d0
https://doi.org/10.4028/www.scientific.net/msf.615-617.1003
https://doi.org/10.4028/www.scientific.net/msf.615-617.1003
Publikováno v:
Materials Science Forum. :999-1002
Diamond is nominated as a material candidate for future high power device due to its superior material properties and resulting very high FOM. In this paper, our recent progresses and the expected possibilities of diamond for power electronics applic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5c58d00d2359a8066bb35039524eb5
https://doi.org/10.4028/www.scientific.net/msf.615-617.999
https://doi.org/10.4028/www.scientific.net/msf.615-617.999
Publikováno v:
Diamond and Related Materials. 18:292-295
We investigated a field plate structure using Al 2 O 3 . A field plate structure for a diamond Schottky barrier diode was fabricated and the electric breakdown properties were tested for electric field concentration and passivation. A Schottky barrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5af6ce78df05790a3f2611ef73568e
https://doi.org/10.1016/j.diamond.2008.10.021
https://doi.org/10.1016/j.diamond.2008.10.021