Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Nathaporn, Promros"'
Autor:
Nattakorn Borwornpornmetee, Thawichai Traiprom, Takafumi Kusaba, Phongsaphak Sittimart, Hiroshi Naragino, Boonchoat Paosawatyanyong, Tsuyoshi Yoshitake, Nathaporn Promros
Publikováno v:
Heliyon, Vol 9, Iss 12, Pp e22511- (2023)
The current research demonstrates the modification of the wetting behavior and mechanical features as well as structure and morphology of Fe3Si films created via facing target sputtering by the rapid thermal annealing (RTA) with the set RTA temperatu
Externí odkaz:
https://doaj.org/article/794065e36d404ec3817cf78aaaffc473
Publikováno v:
Advances in Materials Science and Engineering, Vol 2017 (2017)
In this study, n-type β-FeSi2/p-type Si heterojunctions, inside which n-type β-FeSi2 films were epitaxially grown on p-type Si(111) substrates, were created using radio frequency magnetron sputtering at a substrate temperature of 560°C and Ar pres
Externí odkaz:
https://doaj.org/article/3ac344fdbc5e4a0590609d53c323e74a
Autor:
Pitak Eiamchai, Pitoon Noymaliwan, Saksorn Limwichean, Nattakorn Borwornpornmetee, Tanapoj Chaikeeree, Rawiwan Chaleawpong, Bunpot Saekow, Peerapong Nuchuay, Supanit Porntheeraphat, B. Samransuksamer, Surachart Kamoldilok, Nathaporn Promros, Mati Horprathum, Chanunthorn Chananonnawathorn, Peerasil Charoenyuenyao, Viyapol Patthanasettakul
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:5006-5013
In the present study, indium tin oxide (ITO) nanorod films were produced by usage of ion-assisted electron-beam evaporation with a glancing angle deposition technique. The as-produced ITO nanorod films were annealed in the temperature range of 100–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9958ca00e197d45d4562c4483aaae72
https://doi.org/10.1166/jnn.2020.17840
https://doi.org/10.1166/jnn.2020.17840
Autor:
Yūki Tanaka, Rawiwan Chaleawpong, Pattarapol Sittisart, Nathaporn Promros, Tsuyoshi Yoshitake, Peerasil Charoenyuenyao, Nattakorn Borwornpornmetee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:5075-5081
In this research, β-FeSi2 thin films were manufactured onto Si(111) wafer substrates through the usage of radio-frequency magnetron sputtering (RFMS) method at 2.66 × 10−1 Pa of sputtering pressure. The substrate temperatures were varied at 500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::762dee55d1f59b17c3c5c5888193f245
https://doi.org/10.1166/jnn.2020.17839
https://doi.org/10.1166/jnn.2020.17839
Autor:
Tsuyoshi Yoshitake, Ali Mohamed Ali, Phongsaphak Sittimart, Peerasil Charoenyuenyao, Rawiwan Chaleawpong, Nathaporn Promros, Abdelrahman Zkria, Yūki Katamune, Eslam Abubakr, Satoshi Takeichi, Mohamed Egiza
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:4884-4891
Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db7b130f0d3cf1335194613233f8f8d
https://doi.org/10.1166/jnn.2020.17838
https://doi.org/10.1166/jnn.2020.17838
Autor:
Takanori Hanada, Rawiwan Chaleawpong, Tsuyoshi Yoshitake, Shinya Ohmagari, Peerasil Charoenyuenyao, Nathaporn Promros
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:331-337
In the present research, heterojunctions comprised of n-type Si wafer substrates and B-doped p-type ultrananocrystalline diamond/hydrogenated amorphous carbon composite films were produced successfully by using pulsed laser deposition. Their alternat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95bf0bac0da1be1bafaf4a4bbc2eefa0
https://doi.org/10.1166/jnn.2020.17293
https://doi.org/10.1166/jnn.2020.17293
Autor:
Supanit Porntheeraphat, Tsuyoshi Yoshitake, Bunpot Saekow, Nathaporn Promros, Peerasil Charoenyuenyao, Rawiwan Chaleawpong
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:621-628
In this research, β-FeSi₂ films were formed on Si(111) wafer substrates via the utilization of facingtargets direct-current sputtering (FTDCS). The sputtering pressure was set at 1.33×10-1 Pa and the substrate temperature was maintained at 600 °
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f4125a9d1b20d1d1c0363fbb20b964e
https://doi.org/10.1166/jnn.2020.17294
https://doi.org/10.1166/jnn.2020.17294
Autor:
Kenji Hanada, Peerasil Charoenyuenyao, Tsuyoshi Yoshitake, Nathaporn Promros, Li Chen, Rawiwan Chaleawpong
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:433-441
The production of p-type silicon/intrinsic ultrananocrystalline diamond/n-type nanocrystalline iron disilicide heterojunction devices was conducted via coaxial arc plasma deposition and pulsed laser deposition. The results of current density-voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f5fc483c34dbf65c80545e552794566
https://doi.org/10.1166/jnn.2020.17295
https://doi.org/10.1166/jnn.2020.17295
Autor:
Takeru Hamasaki, Kazuki Aramaki, Nattakorn Borwornpornmetee, Nathaporn Promros, Rungrueang Phatthanakun, Rawiwan Chaleawpong, Phongsaphak Sittimart, Tsuyoshi Yoshitake, Peerasil Charoenyuenyao, Boonchoat Paosawatyanyong
Publikováno v:
Coatings, Vol 11, Iss 923, p 923 (2021)
Coatings; Volume 11; Issue 8; Pages: 923
Coatings; Volume 11; Issue 8; Pages: 923
Fe3Si films are deposited onto the Si(111) wafer using sputtering with parallel facing targets. Surface modification of the deposited Fe3Si film is conducted by using a microwave plasma treatment under an Ar atmosphere at different powers of 50, 100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ac04ffe76b2288714e8510281bb5203
https://www.mdpi.com/2079-6412/11/8/923
https://www.mdpi.com/2079-6412/11/8/923
Autor:
Supanit Porntheeraphat, Bunpot Saekow, Nathaporn Promros, Rawiwan Chaleawpong, Tsuyoshi Yoshitake, Peerasil Charoenyuenyao
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:6834-6840
Nanocrystalline iron disilicide (NC-FeSi₂) films were created at room temperature by facing-target direct current sputtering. The NC-FeSi₂ films were annealed at different temperatures of 300 °C, 600 °C, and 900 °C under high vacuum for 2 hour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::369456480b21a1f868effe80ea08c32a
https://doi.org/10.1166/jnn.2019.17125
https://doi.org/10.1166/jnn.2019.17125