Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Nathaniel S. Safron"'
Autor:
Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, Tung‐Ying Lee, Wen‐Hao Chang, Matthias Passlack, Hon‐Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (d
Externí odkaz:
https://doaj.org/article/262eb55fe9514f40947d0b2bde04564a
Autor:
Mikhail A. Kats, Jonathan H. Dwyer, Chenghao Wan, Anjali Suresh, Padma Gopalan, Vivek Saraswat, Victor W. Brar, Wei Wei, Jonathan W. Choi, Michael S. Arnold, Nathaniel S. Safron, Joel Siegel, Wyatt A. Behn, Margaret Fortman
Publikováno v:
ACS Photonics. 8:1277-1285
Graphene plasmonic resonators have been broadly studied in the terahertz and mid-infrared ranges because of their electrical tunability and large confinement factors, which can enable the dramatic ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f2d3426fa980a7f2fc4b53e4cb4bc2a
https://doi.org/10.1021/acsphotonics.1c00149
https://doi.org/10.1021/acsphotonics.1c00149
Autor:
Mikhail A. Kats, Vivek Saraswat, Joel Siegel, Jonathan W. Choi, Victor W. Brar, Anjali Suresh, Wei Wei, Chenghao Wan, Padma Gopalan, Jonathan H. Dwyer, Nathaniel S. Safron, Michael S. Arnold, Margaret Fortman
Publikováno v:
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVII.
Patterning graphene into nanostructures enables the coupling of free space radiation to plasmons in graphene. These plasmons are highly tunable and have been used in such applications as tunable filters and chemical sensors in the THz and mid-infrare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afd23b01d5c754189f0b5464b41cc73c
https://doi.org/10.1117/12.2571066
https://doi.org/10.1117/12.2571066
Autor:
Myungwoong Kim, Padma Gopalan, Nathaniel S. Safron, Naechul Shin, Michael S. Arnold, Jonathan W. Choi
Publikováno v:
Solid State Communications. 224:76-80
Top-down subtractive lithography has previously been used to pattern graphene nanostructures which lack ideal properties due to (1) limited resolution and (2) disordered edges. Here, we introduce a method to convert such disordered edges into relativ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9282bccf402eeab9cdff89708e5bf745
Autor:
Myungwoong Kim, Changshui Huang, Padma Gopalan, Bryan M. Wong, Nathaniel S. Safron, Michael S. Arnold
Publikováno v:
The Journal of Physical Chemistry C. 118:2077-2084
We show a large enhancement in the Raman signal from a highly polarizable molecule attached to single layer graphene. Through spatial mapping of the Raman signal and wavelength-dependent Raman measurements from a dipolar chromophore latched to a grap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b2eca946d5420a51efebfa9672a362a
https://doi.org/10.1021/jp410749a
https://doi.org/10.1021/jp410749a
Autor:
Jung-Hun Seo, Meng-Yin Wu, Zhenqiang Ma, Robert M. Jacobberger, Nathaniel S. Safron, Dominick J. Bindl, Tzu-Hsuan Chang, Susmit Singha Roy, Feng Xu, Michael S. Arnold
Publikováno v:
Nano Letters. 14:682-686
Field-effect transistors (FETs) that are stretchable up to 50% without appreciable degradation in performance are demonstrated. The FETs are based on buckled thin films of polyfluorene-wrapped semiconducting single-walled carbon nanotubes (CNTs) as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::397bd56cead2af85443fe4c5e3bf9c92
https://doi.org/10.1021/nl403941a
https://doi.org/10.1021/nl403941a
Autor:
Nathaniel S. Safron, Michael S. Arnold
Publikováno v:
J. Mater. Chem. C. 2:744-755
We investigate the critical methane concentration (CMC) during the atmospheric-pressure chemical vapor deposition (AP-CVD) of graphene on Cu from CH4. Above the CMC, graphene both nucleates and grows; below the CMC, it etches; while at the CMC, carbo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f5c713b08eaa8739d2e7f55b6950e38
https://doi.org/10.1039/c3tc31738b
https://doi.org/10.1039/c3tc31738b
Autor:
Nathaniel S. Safron, Padma Gopalan, Michael S. Arnold, Gerald J. Brady, Austin J. Way, Harold T. Evensen
Publikováno v:
Science Advances
Nearly ballistic carbon nanotube array transistors are realized with current densities outmatching conventional semiconductors.
Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge
Carbon nanotubes (CNTs) are tantalizing candidates for semiconductor electronics because of their exceptional charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ce03157c4e09251350507961feeb04f
https://pubmed.ncbi.nlm.nih.gov/27617293
https://pubmed.ncbi.nlm.nih.gov/27617293
Publikováno v:
ACS Nano. 6:9846-9854
We demonstrate the fabrication and study of the structure-property relationships of large-area (1 cm(2)) semiconducting nanoperforated (NP) graphene with tunable constriction width (w = 7.5-14 nm), derived from CVD graphene using block copolymer lith
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8786c3a4985b240e2622b881fab7c38
https://doi.org/10.1021/nn3033985
https://doi.org/10.1021/nn3033985
Autor:
Nathaniel S. Safron, Michael S. Arnold
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:697-706
We have recently reported on the synthesis and characterization of a new form of nanostructured graphene that we call "nanoperforated graphene". Nanoperforated graphene is fabricated by etching a periodic array of nanoscale holes into atomic membrane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2ae7174fd568535feaf580b53d9fc2c
https://doi.org/10.1142/s0129156411006982
https://doi.org/10.1142/s0129156411006982