Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Nathaniel P. Stern"'
Autor:
M. Iqbal Bakti Utama, Hongfei Zeng, Tumpa Sadhukhan, Anushka Dasgupta, S. Carin Gavin, Riddhi Ananth, Dmitry Lebedev, Wei Wang, Jia-Shiang Chen, Kenji Watanabe, Takashi Taniguchi, Tobin J. Marks, Xuedan Ma, Emily A. Weiss, George C. Schatz, Nathaniel P. Stern, Mark C. Hersam
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Two-dimensional (2D) materials have attracted attention for quantum information science due to their ability to host single-photon emitters (SPEs). Although the properties of atomically thin materials are highly sensitive to surface modifica
Externí odkaz:
https://doaj.org/article/1f2daaae56e1465c902ded7cd3be0939
Autor:
Trevor LaMountain, Jovan Nelson, Erik J. Lenferink, Samuel H. Amsterdam, Akshay A. Murthy, Hongfei Zeng, Tobin J. Marks, Vinayak P. Dravid, Mark C. Hersam, Nathaniel P. Stern
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Microcavity exciton-polaritons in atomically thin semiconductors are a promising platform for valley manipulation. Here, the authors show valley-selective control of polariton energies in monolayer WS2 using the optical Stark effect, thereby extendin
Externí odkaz:
https://doaj.org/article/128fa4f4a5c24fdd88c67f2455c6e027
Autor:
Guohua Wei, David A. Czaplewski, Erik J. Lenferink, Teodor K. Stanev, Il Woong Jung, Nathaniel P. Stern
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract Three-dimensional confinement allows semiconductor quantum dots to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-e
Externí odkaz:
https://doaj.org/article/de36ec3376e54592bd2d162a424e063a
Autor:
Erik J. Lenferink, Trevor LaMountain, Teodor K. Stanev, Ethan Garvey, Kenji Watanabe, Takashi Taniguchi, Nathaniel P. Stern
Publikováno v:
ACS Photonics. 9:3067-3074
Publikováno v:
Proceedings of the National Academy of Sciences. 120
The study of molecular polaritons beyond simple quantum emitter ensemble models (e.g., Tavis–Cummings) is challenging due to the large dimensionality of these systems and the complex interplay of molecular electronic and nuclear degrees of freedom.
Autor:
Jovan Nelson, Teodor K. Stanev, Dmitry Lebedev, Trevor LaMountain, J. Tyler Gish, Hongfei Zeng, Hyeondeok Shin, Olle Heinonen, Kenji Watanabe, Takashi Taniguchi, Mark C. Hersam, Nathaniel P. Stern
Publikováno v:
Physical Review B. 107
Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena.
Publikováno v:
ACS Photonics. 9:922-928
Autor:
Nathaniel P. Stern, Akshay A. Murthy, Roberto dos Reis, Takashi Taniguchi, Vinayak P. Dravid, Teodor K. Stanev, Stephanie M. Ribet, Kenji Watanabe, Pufan Liu
Publikováno v:
Nano Lett
In situ electron microscopy is an effective tool for understanding the mechanisms driving novel phenomena in 2D structures. However, due to practical challenges, it is difficult to address these technologically relevant 2D heterostructures with elect
Autor:
Zdeněk Sofer, Nathaniel P. Stern, Teodor K. Stanev, Ethan S. Garvey, Lukáš Valdman, Gilhwan Lim, Vinod K. Sangwan, Thomas W. Song, J. Tyler Gish, Mark C. Hersam, Oluwaseyi Balogun, Shizhou Jiang, Leonidas Georgopoulos, Dmitry Lebedev
Publikováno v:
ACS Nano. 15:10659-10667
Two-dimensional transitional metal halides have recently attracted significant attention due to their thickness-dependent and electrostatically tunable magnetic properties. However, this class of materials is highly reactive chemically, which leads t
Autor:
Teodor K. Stanev, Pufan Liu, Hongfei Zeng, Erik J. Lenferink, Akshay A. Murthy, Nathaniel Speiser, Kenji Watanabe, Takashi Taniguchi, Vinayak P. Dravid, Nathaniel P. Stern
Publikováno v:
ACS applied materialsinterfaces.
Direct top-down nanopatterning of semiconductors is a powerful tool for engineering properties of optoelectronic devices. Translating this approach to two-dimensional semiconductors such as monolayer transition metal dichalcogenides (TMDs) is challen