Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Nathanial Sheehan"'
Publikováno v:
ACS Photonics. 4:1440-1446
A novel ultrafast reflective grating-imaging technique has been developed to measure ambipolar carrier diffusion in GaAs/AlAs quantum wells and bulk GaAs. By integrating a transmission grating and an imaging system into the traditional pump–probe s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fde58c61ae6b430e75f4f8dd2d9fe166
https://doi.org/10.1021/acsphotonics.7b00187
https://doi.org/10.1021/acsphotonics.7b00187
Publikováno v:
Optics letters. 44(18)
Surface plasmon resonance (SPR) is a powerful tool to amplify coherent phonon signals in metal films. In a 40 nm Au film excited with a 400 nm pump, we observed an abnormally large electron–phonon coupling constant of about 8×1017 W/(m3K), almost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92f57842187f2a7bc571879e59f0275d
https://pubmed.ncbi.nlm.nih.gov/31517938
https://pubmed.ncbi.nlm.nih.gov/31517938
Autor:
Yuan Huang, Peter Sutter, Deji Akinwande, Ke Chen, Seth R. Bank, Tiger Hu Tao, Shaoqing Zhang, Tianshu Lai, Shaoyin Fang, Nathanial Sheehan, Jung-Fu Lin, Feng He, Xianghai Meng, Yaguo Wang, Maruthi N. Yogeesh
Publikováno v:
Carbon. 107:233-239
Graphene has great potential for fabrication of ultrafast opto-electronics, in which relaxation and transport of photoexcited carriers determine device performance. Even though ultrafast carrier relaxation in graphene has been studied vigorously, tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45bd55fd12a50786dba6951ca4b8dfce
https://doi.org/10.1016/j.carbon.2016.05.075
https://doi.org/10.1016/j.carbon.2016.05.075
Autor:
Ke Chen, Yaguo Wang, Feng He, Yongjian Zhou, Jihoon Jeong, Seth R. Bank, Xianghai Meng, Nathanial Sheehan
Optical grating technique, where optical gratings are generated via light inference, has been widely used to measure charge carrier and phonon transport in semiconductors. In this paper, compared are three types of transient optical grating technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab50a1fff7c77ba78668feac258c84f5
http://arxiv.org/abs/1805.01561
http://arxiv.org/abs/1805.01561
Autor:
Nathanial Sheehan, Scott D. Sifferman, Seth R. Bank, Hari P. Nair, Rodolfo Salas, Adam M. Crook, Scott J. Maddox
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 21:1-10
We describe how growth at low temperatures can enable increased active layer strain in GaSb-based type-I quantum-well diode lasers, with emphasis on extending the emission wavelength. Critical thickness and roughening limitations typically restrict t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85a7e8c1fa88f4dc308415ab9a0694b2
https://doi.org/10.1109/jstqe.2015.2427742
https://doi.org/10.1109/jstqe.2015.2427742