Zobrazeno 1 - 10
of 194
pro vyhledávání: '"Nathan W. Cheung"'
Publikováno v:
III-V Nitride Semiconductors ISBN: 9780367813628
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abc80e37b98acf6c3e7b16914a201097
https://doi.org/10.1201/9780367813628-3
https://doi.org/10.1201/9780367813628-3
Autor:
Hai-Yan Jin, Nathan W. Cheung
Publikováno v:
IEEE Transactions on Electron Devices. 55:1250-1254
A new method is presented to extract bulk carrier mobility of germanium-on-insulator (GeOI) films based on the data from the depletion mode of four-point probe pseudo-MOSFET measurement. Analytical models of the conductance in depletion region and re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f27f5fe18474ad6a9d245108167c1750
https://doi.org/10.1109/ted.2008.919301
https://doi.org/10.1109/ted.2008.919301
Publikováno v:
Microelectronics Reliability. 42:1985-1989
Ultra-shallow 28–88 nm n+p junctions formed by PH3 and AsH3 plasma immersion ion implantation (PIII) have been studied. The reverse leakage current density and intrinsic bulk leakage current density of the diodes are found to be as low as 4.2 nA cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad4d37e95bbcec33e6ea388725ea38bb
https://doi.org/10.1016/s0026-2714(02)00099-9
https://doi.org/10.1016/s0026-2714(02)00099-9
Autor:
Nathan W. Cheung
Publikováno v:
Surface and Coatings Technology. 156:24-30
Plasma immersion ion implantation (PIII) was originally conceived as a method for high-flux implantation and with the capability of conformally implanting non-planar surfaces. Research in the last 15 years has revealed other characteristics which are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab575b3756ed5894e8e0b60a5bbeeab
https://doi.org/10.1016/s0257-8972(02)00068-3
https://doi.org/10.1016/s0257-8972(02)00068-3
Autor:
C. H. Yun, Nathan W. Cheung
Publikováno v:
Journal of Electronic Materials. 30:960-964
A silicon layer was successfully transferred from a hydrogen pattern-implanted wafer to another by a thermal or mechanical cleavage process. The first wafer was masked with various patterns of 2.3 micron-thick poly-silicon, and was implanted at a hyd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c25ff6db7b775d5b12f7d35f75944d
https://doi.org/10.1007/bf02657717
https://doi.org/10.1007/bf02657717
Autor:
Nathan W. Cheung, Barry P. Linder
Publikováno v:
Surface and Coatings Technology. 136:132-137
Plasma immersion ion implantation (PIII) has significant advantages over conventional implantation in high dose and low energy implant applications. One potential drawback is the poly-energetic nature of pulsed PIII implantation. The contribution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ab1ba36731433261877906103c4db8a
https://doi.org/10.1016/s0257-8972(00)01042-2
https://doi.org/10.1016/s0257-8972(00)01042-2
Autor:
Nathan W. Cheung, Lucia Feng, William G. En, Michael A. Bryan, Wei Liu, Shu Qin, Michael I Current, Chung Chan, Ian S. Roth, Francois J. Henley, Albert Lamm, Igor J. Malik
Publikováno v:
Surface and Coatings Technology. 136:138-141
A plasma immersion ion implantation (PIII) system is described which provides the capability to bridge the range between research exploration and commercial applications for materials modification of electronic materials, with a particular focus on l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f75d6e21b672b8e37032933a035271f0
https://doi.org/10.1016/s0257-8972(00)01043-4
https://doi.org/10.1016/s0257-8972(00)01043-4
Autor:
Alberto Salleo, A. B. Wengrow, Nathan W. Cheung, Y. Cho, Timothy D. Sands, William S. Wong, Nathaniel J. Quitoriano
Publikováno v:
Journal of Electronic Materials. 28:1409-1413
Gallium nitride (GaN) thin films grown on sapphire substrates were successfully bonded and transferred onto GaAs, Si, and polymer “receptor” substrates using a low-temperature Pd-In bond followed by a laser lift-off (LLO) process to remove the sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f4f5fe1d1307cd741d48dd989744e9a
https://doi.org/10.1007/s11664-999-0131-x
https://doi.org/10.1007/s11664-999-0131-x
Publikováno v:
IEEE Transactions on Plasma Science. 27:633-636
Plasma immersion ion implantation (PIII) is an economical means to implant a high dose of hydrogen into silicon and when combined with ion cut, has been demonstrated to be a viable technique to fabricate silicon-on-insulator (SOI). However, its succe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5820b0b13bd3cd3f542e4b3d40fdf963
https://doi.org/10.1109/27.772296
https://doi.org/10.1109/27.772296
Autor:
Nathan W. Cheung, Piotr Perlin, Noad A. Shapiro, Timothy D. Sands, William S. Wong, Laila Mattos, Eicke R. Weber, Joachim Krüger
Publikováno v:
Journal of Applied Physics. 85:2385-2389
We have performed a detailed investigation of the photoluminescence pressure dependence of heteroepitaxial GaN thin films on sapphire substrates. A comparison between as grown GaN on sapphire and free-standing GaN membranes, created using a laser ass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d9abe9735cc184a93254f71566e0e98
https://doi.org/10.1063/1.369554
https://doi.org/10.1063/1.369554