Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Nathan Palmquist"'
Autor:
Nathan Palmquist, Ryan M. Anderson, Jared A. Kearns, Joonho Back, Emily S. Trageser, Stephen Gee, Stephen P. Denbaars, Shuji Nakamura
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Autor:
Daniel A. Cohen, Emily Trageser, Nathan Palmquist, Ryan G. Anderson, Shuji Nakamura, S. P. DenBaars, Haojun Zhang
Publikováno v:
Optics express. 30(2)
We report continuous wave operation of electrically injected InGaN laser diodes using nano-porous GaN n-side cladding with 33% porosity. At 454 nm emission wavelength, the pulsed injection slope efficiency is 0.24 W/A with a high loss of 82 cm-1. The
Autor:
Panpan Li, Yifan Yao, Nathan Palmquist, Hongjian Li, James S. Speck, Shuji Nakamura, Haojun Zhang, Michael Iza, Matthew S. Wong, Steven P. DenBaars
Publikováno v:
Optics express. 28(13)
High performance InGaN micro-size light-emitting diodes (µLEDs) with epitaxial tunnel junctions (TJs) were successfully demonstrated using selective area growth (SAG) by metalorganic chemical vapor deposition (MOCVD). Patterned n + GaN/n-GaN layers
Autor:
Daniel A. Cohen, SeungGeun Lee, Jared Kearns, Nathan Palmquist, Shuji Nakamura, Steven P. DenBaars, Joonho Back
Publikováno v:
Gallium Nitride Materials and Devices XV.
Autor:
Daniel A. Cohen, Jiaxiang Jiang, Nathan Palmquist, James S. Speck, Panpan Li, Shuji Nakamura, Chae Hon Kim, Yong Hyun Baek, Matthew S. Wong, Tal Margalith, Philip Chan, Ji Hun Kang, Changmin Lee, Steven P. DenBaars
Publikováno v:
Applied Physics Letters. 119:202102
The optical and electrical characteristics of InGaN blue and green micro-light-emitting diodes (μLEDs) with GaN tunnel junction (TJ) contacts grown by metalorganic chemical vapor deposition (MOCVD) were compared at different activation temperatures
Autor:
Hongjian Li, Yuewei Zhang, Haojun Zhang, Shuji Nakamura, Yifan Yao, Panpan Li, James S. Speck, Steven P. DenBaars, Michael Iza, Nathan Palmquist
Publikováno v:
Semiconductor Science and Technology. 35:125023
High performance GaN-based micro-light-emitting diodes (µLEDs) with epitaxial n-InGaN/n-GaN tunnel junctions (InGaN TJs) were grown by metalorganic chemical vapor deposition (MOCVD). The InGaN TJs µLEDs show a significant reduction of forward volta
Autor:
Nathan Palmquist, Gabrielle Nyirjesy, Ebuka S. Arinze, Botong Qiu, Yan Cheng, Susanna M. Thon, Gary Qian, Yida Lin
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Owing to their solution-processing flexibility, band gap tunability and infrared responsivity, colloidal quantum dots (CQDs) are favorable materials for building solar cells with tunable spectral profiles. Here, we design, optimize and fabricate mult
Autor:
Yan Cheng, Botong Qiu, Gabrielle Nyirjesy, Gary Qian, Yida Lin, Ebuka S. Arinze, Nathan Palmquist, Susanna M. Thon
Publikováno v:
Conference on Lasers and Electro-Optics.
We develop a method that combines thin film interference modeling with population-based optimization algorithms to demonstrate infrared-responsive color-tuned colloidal quantum dot solar cells with 10 to 15 mA/cm2 photocurrents and semi-transparent c
Autor:
Michael Jackson, Sumaya Ifland, Patrick Penoyar, Mark McKnight, Nathan Palmquist, Matthew Pruett
Publikováno v:
IEEE Journal of Quantum Electronics. 50:42-46
An optically pumped molecular laser system utilizing a transverse or zig-zag pumping geometry of the far-infrared (FIR) laser medium has enabled the reinvestigation of the CH2DOH, CHD2OH, and CH318OH isotopic forms of methanol for wavelengths > 100
Publikováno v:
SPIE Proceedings.
Colloidal quantum dots (CQDs) are an attractive material for optoelectronic applications because they combine flexible, low-cost solution-phase synthesis and processing with the potential for novel functionality arising from their nanostructure. Spec