Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Nathan P. Marchack"'
Autor:
Jung-hyeon Kim, Nathan P. Marchack, Seonghoon Woo, C. P. D'Emic, R. P. Robertazzi, Thitima Suwannasiri, Philip L. Trouilloud, Matthias Georg Gottwald, Kothandaraman Chandrasekharan, Houssameddine Dimitri, S. L. Brown, D.I. Kim, Gen P. Lauer, B. Doris, Qing He, Janusz J. Nowak, M. Reuter, Hyae-ryoung Lee, Pouya Hashemi, Daniel C. Worledge, Guohan Hu, Jonathan Z. Sun
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We report for the first time reliable 2 ns switching of spin-transfer torque magneto-resistive random access memory (STT-MRAM) devices by demonstrating 100% write-error-rate (WER) yield at 1e-6 write-error floor of 254 devices with tight distribution
Autor:
Luca Nela, Hariklia Deligianni, Steven J. Holmes, Nathan P. Marchack, George S. Tulevski, Silvia Demuru, Lin Qinghuang, Damon B. Farmer
Publikováno v:
ACS Sensors. 3:799-805
Dopamine is a neurotransmitter that modulates arousal and motivation in humans and animals. It plays a central role in the brain "reward" system. Its dysregulation is involved in several debilitating disorders such as addiction, depression, Parkinson
Autor:
John M. Papalia, George G. Totir, Sebastian Engelmann, Hiroyuki Miyazoe, Damon B. Farmer, L. Buzi, Hongwen Yan, Nathan P. Marchack
Publikováno v:
Journal of Applied Physics. 130:080901
The scientific study of plasma discharges and their material interactions has been crucial to the development of semiconductor process engineering and, by extension, the entire microelectronics industry. In recent years, the proliferation of the big
Autor:
Sang-wuk Park, Keizo Kinoshita, Kenji Ishikawa, Silvia Armini, Gottlieb S. Oehrlein, Tatsuru Shirafuji, Keren J. Kanarik, Yasuhiro Morikawa, Richard A. Gottscho, Hisataka Hayashi, Tatsuo Ishijima, Nathan P. Marchack, Gert J. Leusink, Emilie Despiau-Pujo, Takahide Murayama
Publikováno v:
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
Japanese Journal of Applied Physics, 2019, 58 (SE), pp.SE0801. ⟨10.7567/1347-4065/ab163e⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bca17bb5242eaeeee079b4e77984bcef
https://hal.univ-grenoble-alpes.fr/hal-02337524
https://hal.univ-grenoble-alpes.fr/hal-02337524
Autor:
William M. J. Green, Eric J. Zhang, Jason S. Orcutt, Elizabeth A. Duch, Nathan P. Marchack, Laurent Schares, Yves Martin, Chi Xiong, Martin Glodde, Tymon Barwicz
Publikováno v:
Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XX.
We present a fully integrated photonic chip spectrometer for near-infrared tunable diode laser absorption spectroscopy of methane (CH4). The integrated photonic sensor incorporates a heterogeneously integrated III-V laser/detector chip coupled to a s
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
Self-alignment via solder-surface tension in flip-chip bonding opens the door to low-cost, high-throughput assembly of components with sub-micron accuracy. This is especially impactful to integrated photonics as used for high speed optical communicat
Autor:
Yves Martin, Chu C. Teng, Laurent Schares, Nathan P. Marchack, Eric J. Zhang, Jason S. Orcutt, Elizabeth A. Duch, Gerard Wysocki, Sebastian Engelmann, Tymon Barwicz, Martin Glodde, Chi Xiong, Swetha Kamlapurkar, Russell Wilson, Nigel Hinds, Tom Picunko, William M. J. Green
Publikováno v:
OFC
We present a photonic chip sensor platform for near-infrared laser absorption spectroscopy, which incorporates an uncooled III-V laser and detector, on-chip methane reference cell, and 30cm-long evanescent field waveguides, integrated on a silicon ph
Autor:
Hiroyuki Miyazoe, John M. Papalia, Nathan P. Marchack, Robert L. Bruce, Sebastian Engelmann, Eric A. Joseph
Publikováno v:
Solid State Phenomena. 255:41-48
Over the course of the past few years, the semiconductor industry has continued to invent and innovate profoundly to adhere to Moore’s Law and Dennard scaling. At each of the technology nodes starting with 45nm, new materials and integration techni
Autor:
Nathan P. Marchack, John M. Papalia, Hiroyuki Miyazoe, Matthew Sagianis, Sebastian Engelmann, L. Buzi
Publikováno v:
Journal of Vacuum Science & Technology A. 38:033006
Monitoring vacuum ultraviolet (UV/VUV) emission in plasma systems is challenging as it requires specialized diagnostic systems or sensors to be compatible with these devices. This study addresses different reactor configurations and plasma chemistrie
Publikováno v:
Journal of Vacuum Science & Technology A. 38:022609
Surface oxide formation inhibiting the etch of a tantalum nitride (TaN) film was controlled through step pressure modulation and H2 addition in a Cl2/Ar based plasma-assisted cyclic etch process. Sources contributing to the oxidation of the film incl