Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Nathan J. O'Brien"'
Publikováno v:
Green Chemistry Letters and Reviews, Vol 15, Iss 3, Pp 658-670 (2022)
Quaternary metal oxynitride-based photoanodes with a large light transmittance are promising for high solar-to-hydrogen (STH) conversion efficiency in photoelectrochemical (PEC) tandem cells. Transparent substrates to support PEC water-splitting were
Externí odkaz:
https://doaj.org/article/e11185f115cc4420be5926cb2de0c7b2
Autor:
Rouzbeh Samii, Anton Fransson, Pamburayi Mpofu, Pentti Niiranen, Lars Ojamäe, Vadim Kessler, Nathan J. O’Brien
Publikováno v:
Inorganic Chemistry. 61:20804-20813
Group 11 thin films are desirable as interconnects in microelectronics. Although many M-N-bonded Cu precursors have been explored for vapor deposition, there is currently a lack of suitable Ag and Au derivatives. Herein, we present monovalent Cu, Ag,
Publikováno v:
Dalton Transactions. 51:4712-4719
Indium oxide (In2O3) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of In2O3 by thermal atomic layer deposition (ALD) using our recently reported indium(iii) triazenide prec
Publikováno v:
European Journal of Inorganic Chemistry. 2022
Indium and gallium nitride are important semi-conductor materials with desirable properties for high-frequency and power electronics. We have previously demonstrated high-quality ALD grown InN and GaN using the hexacoordinated 1,3-diisopropyltriazeni
Publikováno v:
Dalton Transactions. 50:16003-16012
The first phosphinoboronic ester bearing a fused bicyclic framework was synthesised by either deprotonation and hydride abstraction or Rh-catalysed dehydrogenation of a hydrophosphineboronic ester. The phosphinoboronic ester reacted as a Lewis acid w
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 51(12)
Indium oxide (In
We present an ALD approach to metastable In1-xGaxN with 0.1 < x < 0.5 based on solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse. A near In0.5Ga0.5N film with a bandgap value of 1.94 eV was achieved on a Si(10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3919d5282b15b156a266b9c1d79cd4cb
https://doi.org/10.26434/chemrxiv.14671575.v1
https://doi.org/10.26434/chemrxiv.14671575.v1
Autor:
Nathan J. O’Brien, Henrik Pedersen, Polla Rouf, Ivan Gueorguiev Ivanov, Lars Ojamäe, Karl Rönnby, Rouzbeh Samii
Publikováno v:
The Journal of Physical Chemistry C. 123:25691-25700
Indium nitride (InN) is an interesting material for future high-frequency electronics due to its high electron mobility. The problematic deposition of InN films currently prevents full exploration of InN-based electronics. We present studies of atomi
Autor:
Nathan J. O’Brien, Fransson A, Seán T. Barry, Goran Bačić, David Zanders, Kessler, Henrik Pedersen, Rouzbeh Samii, Lars Ojamäe
The number of M–N bonded divalent group 14 precursors suitable for atomic layer deposition is limited, in particular for Ge and Pb. A majority of the reported precursors are dicoordinated, with the only tetracoordinated example being the Sn(II) ami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045685c117911102e636406b608130ce
https://doi.org/10.26434/chemrxiv.14176718.v1
https://doi.org/10.26434/chemrxiv.14176718.v1
Autor:
Petro Deminskyi, Polla Rouf, Sydney C. Buttera, Nathan J. O’Brien, Henrik Pedersen, Seán T. Barry
A heteroleptic amidoalane precursor is presented as a more suitably designed candidate to replace trimethylaluminum (TMA) for atomic layer deposition of aluminum nitride (AlN). The lack of C-Al bonds and the strongly reducing hydride ligands in [AlH2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2132c7d44fa1dfeea9e3ca5cd89de667
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-178785
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-178785