Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

Autor: James S. Speck, Nathan G. Young, Robert M. Farrell, Michael Iza, Shuji Nakamura, Claude Weisbuch, Steven P. DenBaars

Publikováno v: Journal of Crystal Growth. 455:105-110

We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::101ccd81a0be3b34f3e282ecdec9cd8c
https://doi.org/10.1016/j.jcrysgro.2016.09.074

Quantum Efficiency of III-Nitride Emitters: Evidence for Defect-Assisted Nonradiative Recombination and its Effect on the Green Gap

Autor: Nathan G. Young, Christophe A. Hurni, Aurelien David, Michael D. Craven

Publikováno v: Physical Review Applied. 11

Carrier lifetime measurements reveal that, contrary to common expectations, the high-current non-radiative recombination (droop) in III-Nitride light emitters is comprised of two contributions which scale with the cube of the carrier density: an intr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6aa6676ebbe2461227e81c4a1dbf0053
https://doi.org/10.1103/physrevapplied.11.031001

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

Autor: J.-M. Lentali, Nathan G. Young, Jacques Peretti, Marcel Filoche, Shuji Nakamura, W. Hahn, Claude Weisbuch, Yuh-Renn Wu, Marco Piccardo, P. Polovodov, James S. Speck, Y. Lassailly, Lucio Martinelli, F. Maroun

Publikováno v: Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 98 (4), ⟨10.1103/PhysRevB.98.045305⟩
Physical Review B: Condensed Matter and Materials Physics
Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2018, 98 (4), ⟨10.1103/PhysRevB.98.045305⟩

We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::840ea0801f444ecdbac776f288acaabc
https://hal.archives-ouvertes.fr/hal-02324900

Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)

Autor: Fouad Maroun, Nathan G. Young, Petr Polovodov, Wiebke Hahn, Jacques Peretti, Jean-Marie Lentali, Y. Lassailly, James S. Speck, Claude Weisbuch, Lucio Martinelli, Marcel Filoche

Publikováno v: Physics and Simulation of Optoelectronic Devices XXVI.

In nitride ternary alloys, natural compositional disorder induces strong electronic localization effects. We present a new experimental approach which allows a direct probing at nanometer scale of disorder-induced localization effects in InGaN/GaN qu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0bd515f117ac0fb69ffba1fce19a10d1
https://doi.org/10.1117/12.2290887

Thermal droop in high-quality InGaN LEDs

Autor: Nathan G. Young, Michael D. Craven, Aurelien David, Cory Lund

Publikováno v: Applied Physics Letters. 115:223502

Thermal droop is investigated in high-quality InGaN light-emitting diodes (LEDs). To determine whether it is caused by intrinsic variations in recombination or by transport effects, photoluminescence and electroluminescence measurements are compared.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fc8f61942f42e5f29a7c23a8cff75ac4
https://doi.org/10.1063/1.5124123