Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Nathan F. Gardner"'
Publikováno v:
SPIE Newsroom.
So far, the semiconductor nanowire research area has mainly delivered results on growth procedures and related material properties. As the development lately has been successful in producing novel nanowire-based structures for optical or electronic a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa897c5b6d9d1b8a2c96b52dd2d56bb
https://doi.org/10.1016/bs.semsem.2015.10.002
https://doi.org/10.1016/bs.semsem.2015.10.002
Publikováno v:
Solid State Communications. 137:230-234
High efficient green light emitting diodes (LED) on the basis of GaN/InGaN exhibit indium-rich nanoclusters inside the quantum wells (QW) due to InN–GaN phase decomposition. By direct measurements of the variations in the electronic structure, we s
Autor:
Y. C. Shen, Andrew Y. Kim, Matthijs H. Keuper, M.G. Craford, Frank M. Steranka, Lou W. Cook, Troy A. Trottier, Werner Goetz, Michael R. Krames, S. Subramanya, Serge L Rudaz, Nathan F. Gardner, Jonathan J. Wierer, D. Collins, Daniel A. Steigerwald, Reena Khare, Paul S. Martin, M. J. Ludowise, Gerd O. Mueller, Regina Mueller-Mach, Mira S. Misra, Gerard Harbers, S. A. Stockman, Robert M Fletcher, Jerome Chandra Bhat, Patrick N. Grillot
Publikováno v:
physica status solidi (a). 194:380-388
High power light emitting diodes (LEDs) continue to increase in output flux with the best III-nitride based devices today emitting over 150 lm of white, cyan, or green light. The key design features of such products will be covered with special empha
Autor:
D. Collins, Nathan F. Gardner, Daniel A. Steigerwald, Michael R. Krames, C. H. Lowery, Jonathan J. Wierer, Paul S. Martin, M. J. Ludowise, Serge L Rudaz, Jerome Chandra Bhat, S. A. Stockman, W. Götz, Gerd O. Mueller, Regina Mueller-Mach
Publikováno v:
physica status solidi (a). 192:237-245
High-power, large-area InGaN/GaN quantum-well heterostructure light-emitting diodes based on an inverted, or flip-chip, configuration are described. These devices are mounted in specially designed high-power (1-5 W) packages and exhibit high extracti
Autor:
Jonathan J. Wierer, R. S. Kern, W. Götz, S. A. Stockman, Paul S. Martin, Daniel A. Steigerwald, Andrew Y. Kim, Michael R. Krames, Frank M. Steranka, J. Sun, Nathan F. Gardner
Publikováno v:
physica status solidi (a). 188:15-21
The performance of high-power AlInGaN light emitting diodes (LEDs) is characterized by light output–current–voltage (L–I–V) measurements for devices with peak emission wavelengths ranging from 428 to 545 nm. The highest external quantum effic
Autor:
Noad A. Shapiro, H. Feick, James S. Speck, Nathan F. Gardner, W.K. Götz, Eicke R. Weber, P. Waltereit
Publikováno v:
physica status solidi (b). 228:147-151
The photoluminescence (PL) of InGaN/GaN quantum well (QW) structures is measured as a function of biaxial strain to study the dependence of the luminescence emission on the built-in electric field. The direction and magnitude of the shift in luminesc
Autor:
Jonathan J. Wierer, John Edward Epler, Mihail M. Sigalas, Jerry A. Simmons, Joel R. Wendt, Nathan F. Gardner, Michael R. Krames, M.G. Craford
Publikováno v:
Applied Physics Letters. 84:3885-3887
Electrical operation of InGaN/GaN quantum-well heterostructure photonic crystal light-emitting diodes (PXLEDs) is demonstrated. A triangular lattice photonic crystal is formed by dry etching into the top GaN layer. Light absorption from the metal con
Autor:
G. E. Stillman, A. W. Hanson, Q.J. Hartmann, Judith E. Baker, M. T. Fresina, S. A. Stockman, Nathan F. Gardner
Publikováno v:
Journal of Applied Physics. 75:4233-4236
The incorporation of residual carbon has been studied for InP grown at low temperatures using TMIn and PH3 by low‐pressure metalorganic chemical vapor deposition. n‐type conduction is observed with electron concentrations as high as 1×1018 cm−
Autor:
S. A. Stockman, C. M. Colomb, A. P. Curtis, Nathan F. Gardner, G. E. Stillman, T. S. Low, D. B. Davito, D. E. Mars
Publikováno v:
Journal of Applied Physics. 73:7471-7477
Minority‐carrier electron‐diffusion coefficients and lifetimes have been measured in heavily doped p‐type GaAs using the zero‐field time‐of‐flight (ZFTOF) technique. The materials studied included C‐doped GaAs grown by molecular‐beam