Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Nathalie Malbert"'
Publikováno v:
2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
Autor:
Nathalie Malbert, Laurent Marechal, Rodrigo Almeida, Mehdy Neffati, Arnaud Garnier, Hélène Fremont, Nathalie Labat, Ariane Tomas
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC)
2021 IEEE 71st Electronic Components and Technology Conference (ECTC), Jun 2021, San Diego, United States. pp.1779-1785, ⟨10.1109/ECTC32696.2021.00281⟩
2021 IEEE 71st Electronic Components and Technology Conference (ECTC), Jun 2021, San Diego, United States. pp.1779-1785, ⟨10.1109/ECTC32696.2021.00281⟩
This paper describes an approach for the evaluation of reliability of a heterogeneous integration of gallium nitride (GaN) and gallium arsenide (GaAs) RF power monolithic microwave integrated circuits (MMICs) in a Fan-Out Wafer-Level Packaging (FOWLP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75c637cc6dee731ff9c3e44f620a5f21
https://hal.archives-ouvertes.fr/hal-03336953
https://hal.archives-ouvertes.fr/hal-03336953
Autor:
Nathalie Labat, Nicolas Defrance, Nathalie Malbert, Ewa Walasiak, Yvon Cordier, Hassan Maher, F. Lecourt, Arnaud Curutchet, Florent Albany
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2021, 126, pp.114291. ⟨10.1016/j.microrel.2021.114291⟩
Microelectronics Reliability, 2021, 126, pp.114291. ⟨10.1016/j.microrel.2021.114291⟩
International audience; Fluorine ion migration in normally-off AlN/GaN HEMTs fabricated by fluorine ion plasma implantation technology is evidenced. Devices under test are co-integrated into the OMMIC commercial D006GH/D01GH MMIC process, providing f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::859d869bc2277eba6d08ecef2070f200
https://hal.science/hal-03539673
https://hal.science/hal-03539673
Autor:
Nathalie Malbert, J.-C. De Jaeger, Arnaud Curutchet, Nathalie Labat, H. Lakhdhar, Nicolas Defrance, Marie Lesecq
Publikováno v:
Microelectronics Reliability. 64:594-598
Step-stress experiments are performed to investigate reliability assessment of ultra-short gate AlGaN/GaN high electron mobility transistor (HEMT) on Si substrate. A methodology based on a sequence of step stress tests has been defined for in-situ di
Publikováno v:
2018 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop
2018 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop, Jul 2018, Brives, France. ⟨10.1109/INMMIC.2018.8430007⟩
2018 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop, Jul 2018, Brives, France. ⟨10.1109/INMMIC.2018.8430007⟩
Trap densities within the GaN HEMT structure limit the charge transport efficiency, thus impeding the device switching efficiency. This work studies and interprets the turn-on response of a GaN HEMT through transient TCAD simulations, impacted by tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06d8ab35083297e4e9f29733fb06b5cd
https://hal.archives-ouvertes.fr/hal-01851997
https://hal.archives-ouvertes.fr/hal-01851997
Publikováno v:
IRPS 2018
IRPS 2018, Mar 2018, San Francisco, United States
IRPS
IRPS 2018, Mar 2018, San Francisco, United States
IRPS
This work investigates the fundamental mechanisms governing an atypical parasitic effect observed in DC forward gate characteristics of Schottky gate GaN HEMTs after High Temperature Operating Life (HTOL) or High Temperature Reverse Bias (HTRB) aging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a7138b14fc3381aaf9347c1440599cb
https://hal.archives-ouvertes.fr/hal-01718850
https://hal.archives-ouvertes.fr/hal-01718850
Publikováno v:
ESREF 2017
ESREF 2017, Sep 2017, Bordeaux, France
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017
ESREF 2017, Sep 2017, Bordeaux, France
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017
2D TCAD Sentaurus simulations based on Drift-Diffusion transport are performed to identify the modeling parameters that crucially affect the reliability characteristics of AlGaN/GaN HEMT devices, demonstrated by their effects on the gate leakage char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::166483d33d9936c504993cc5a2978323
https://hal.archives-ouvertes.fr/hal-02462694
https://hal.archives-ouvertes.fr/hal-02462694
Autor:
Nathalie Malbert, Laurent Brunel, Arnaud Curutchet, Nathalie Labat, Benoit Lambert, Dominique Carisetti
This paper deals with the deep characterization of a novel electrical parasitic effect in AlGaN/GaN technology so called “electrical runaway mechanism.” It is characterized by an anomalous gate current behaviour. Electrical measurements versus te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6effb004548f47b6d07f8b9d50cdacf3
https://hal.science/hal-01718771
https://hal.science/hal-01718771
Autor:
Christophe Chang, Florent Magnier, Benoit Lambert, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat
Publikováno v:
Microelectronics Reliability. :113358
This paper deals with a power drift occurring during the first hours of aging tests on a 0.15 μm GaN-based technology. Its purpose is to characterize the kinetic and the electrical features of this parasitic effect. Output power drift has been monit
Autor:
J.-L. Muraro, Dominique Carisetti, Jean-Claude Clement, Nathalie Malbert, Hélène Fremont, Nathalie Labat, W. Ben Naceur, Barbara Bonnet
Publikováno v:
Microelectronics Reliability. 53:1375-1380
GaAs devices technology used for space applications have failed before the required 1000 h of the temperature humidity bias standard aging test. The results have shown that gate-source reverse bias is the most severe stress condition for transistors