Zobrazeno 1 - 10
of 368
pro vyhledávání: '"Nath, A. N."'
Autor:
Shuvro, Shonkho, Jayaramaiah, Roopa, Muralidharan, Rangarajan, Nath, Digbijoy N., Sen, Prosenjit
We demonstrate active embedded microfluidic cooling in $\beta$-Ga$_2$O$_3$. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500 um thick $\beta$-Ga$_2$O$_3$ substrate. The micro-channels are ab
Externí odkaz:
http://arxiv.org/abs/2304.02645
Autor:
Solanke, Swanand V., Soman, Rohith, Rangarajan, Muralidharan, Raghavan, Srinivasan, Nath, Digbijoy N.
In this report, we demonstrate dual band vertical heterojunction photodetector realized by integrating {\alpha}-In2Se3 with p-type GaN. Flakes of ~ 110 nm thickness were exfoliated on MOCVD grown p-GaN on silicon substrate. Devices showed two distinc
Externí odkaz:
http://arxiv.org/abs/2008.13770
Publikováno v:
In Optical Materials November 2023 145
Autor:
Baby, Rijo, Mandal, Manish, Roy, Shamibrota K., Bardhan, Abheek, Muralidharan, Rangarajan, Basu, Kaushik, Raghavan, Srinivasan, Nath, Digbijoy N.
Publikováno v:
In Microelectronic Engineering 15 October 2023 282
Autor:
Kumar, Sandeep, Vura, Sandeep, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, R., Nath, Digbijoy N.
We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by utilizing a gate recess with length and depth of 200 nm and 124 nm resp
Externí odkaz:
http://arxiv.org/abs/1908.05853
We report on the study of optical properties of mist CVD grown alpha Gallium oxide with the observation of excitonic absorption in spectral responsivity measurements. 163 nm of Gallium oxide was grown on sapphire using Gallium acetylacetonate as the
Externí odkaz:
http://arxiv.org/abs/1907.13072
Autor:
Kumar, Sandeep, Dolmanan, Surani B., Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy N.
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices with meanderi
Externí odkaz:
http://arxiv.org/abs/1905.01922
Publikováno v:
Journal of Applied Physics; 2/14/2024, Vol. 135 Issue 6, p1-8, 8p
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Akademický článek
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