Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Natalya S. Milakhina"'
Autor:
Min Li, Ying Wang, Carlos Lopez-Naranjo, Shiang Hu, Ronaldo César García Reyes, Deirel Paz-Linares, Ariosky Areces-Gonzalez, Aini Ismafairus Abd Hamid, Alan C. Evans, Alexander N. Savostyanov, Ana Calzada-Reyes, Arno Villringer, Carlos A. Tobon-Quintero, Daysi Garcia-Agustin, Dezhong Yao, Li Dong, Eduardo Aubert-Vazquez, Faruque Reza, Fuleah Abdul Razzaq, Hazim Omar, Jafri Malin Abdullah, Janina R. Galler, John F. Ochoa-Gomez, Leslie S. Prichep, Lidice Galan-Garcia, Lilia Morales-Chacon, Mitchell J. Valdes-Sosa, Marius Tröndle, Mohd Faizal Mohd Zulkifly, Muhammad Riddha Bin Abdul Rahman, Natalya S. Milakhina, Nicolas Langer, Pavel Rudych, Thomas Koenig, Trinidad A. Virues-Alba, Xu Lei, Maria L. Bringas-Vega, Jorge F. Bosch-Bayard, Pedro Antonio Valdes-Sosa
Publikováno v:
NeuroImage, Vol 256, Iss , Pp 119190- (2022)
This paper extends frequency domain quantitative electroencephalography (qEEG) methods pursuing higher sensitivity to detect Brain Developmental Disorders. Prior qEEG work lacked integration of cross-spectral information omitting important functional
Externí odkaz:
https://doaj.org/article/b104c9ced51e4e139aaadb4579e05f0a
Autor:
Andrey V. Bocharov, Alexander N. Savostyanov, Sergey S. Tamozhnikov, Alexandra G. Karpova, Natalya S. Milakhina, Evgeny A. Zavarzin, Alexander E. Saprigyn, Gennady G. Knyazev
Publikováno v:
Neuroscience letters. 794
It is assumed that cognitive processes are provided by the regulatory interactions of different brain networks. The three most stable resting state networks, among which the default mode network (DMN), the central executive network (CEN) and the sali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f1b55f88e81e8453433f92ffec24671
https://pubmed.ncbi.nlm.nih.gov/36521645
https://pubmed.ncbi.nlm.nih.gov/36521645
Autor:
Natalya S. Milakhina, Alexander E. Saprygin, Sergey S. Tamozhnikov, Alexandra G. Karpova, Natalya V. Borisova, Alexander N. Savostyanov
Publikováno v:
2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b44c430acb735977885627c0c293d13
https://doi.org/10.1109/edm55285.2022.9855185
https://doi.org/10.1109/edm55285.2022.9855185
Publikováno v:
2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16934c177a118a909aa1d9abb246ecca
https://doi.org/10.1109/edm55285.2022.9855102
https://doi.org/10.1109/edm55285.2022.9855102