Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Natalie B. Feilchenfeld"'
Autor:
Charles A. Whiting, Thai Doan, Jessie Rosenberg, Yves Martin, Natalie B. Feilchenfeld, Robert K. Leidy, Carol Reinholm, John J. Ellis-Monaghan, Fuad E. Doany, Tymon Barwicz, D. M. Gill, Wilfried Haensch, Sebastian Engelmann, Marwan H. Khater, Steven M. Shank, Ankur Agrawal, Mounir Meghelli, J. Ferrario, B.J. Offrein, Christian W. Baks, B. Cucci, Jeffrey C. Maling, Eric A. Joseph, Christa R. Willets, Jason S. Orcutt, S. Chilstedt, Edward W. Kiewra, Chi Xiong, Y. Ding, F. Baker, Jens Hofrichter, Frederick G. Anderson, Dinh Dang, Jonathan E. Proesel, Crystal M. Hedges, Frank R. Libsch, M. Nicewicz, Michael S. Gordon, Xiaowei Tian, Bruce W. Porth, K. McLean, W. M. J. Green, Wesley D. Sacher, Andreas D. Stricker, Folkert Horst
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4752de579ffe16728698630b20782bd
https://doi.org/10.1109/iedm.2015.7409768
https://doi.org/10.1109/iedm.2015.7409768
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In this paper a fully isolated bulk Si RF LDMOS device platform is reported which has been optimized for highly efficient mobile power conversion and RF power amplification. The self-aligned RF LDMOS NFET achieves a specific on-resistance R ds, on of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::289d5ca358377b6432aab06e4b8ec8fa
https://doi.org/10.1109/ispsd.2015.7123458
https://doi.org/10.1109/ispsd.2015.7123458
Autor:
Natalie B. Feilchenfeld, David L. Harame, J. Magerlein, David C. Ahlgren, Edward J. Nowak, Douglas D. Coolbaugh, Alvin J. Joseph, J. Dunn, Basanth Jagannathan, S. St Onge, Louis D. Lanzerotti
Publikováno v:
Proceedings of the IEEE. 93:1539-1558
We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking, instrumentation, and storage markets. Various technological aspects for multiple branches of RF foundry technologies tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7b033047a717a71472be9eaa278f888
https://doi.org/10.1109/jproc.2005.852547
https://doi.org/10.1109/jproc.2005.852547
Autor:
Fernando Guarin, Gregory G. Freeman, David C. Ahlgren, David L. Harame, Robert A. Groves, S. St Onge, Ping-Chuan Wang, Jae-Sung Rieh, D. A. Herman, Bradley A. Orner, Steven H. Voldman, Kenneth J. Stein, Douglas D. Coolbaugh, J. Dunn, S. Subbanna, Louis D. Lanzerotti, Y. Hammad, Bernard S. Meyerson, Michael J. Zierak, Natalie B. Feilchenfeld, David R. Greenberg, Alvin J. Joseph
Publikováno v:
IBM Journal of Research and Development. 47:101-138
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9370cf2d9ac9e0b2885e76630d2b92f0
https://doi.org/10.1147/rd.472.0101
https://doi.org/10.1147/rd.472.0101
Autor:
Michael J. Zierak, Natalie B. Feilchenfeld, Randy L. Wolf, Dawn Wang, Ted Letavic, Myra Boenke, Hanyi Ding, Chaojiang Li
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we introduce an isolated RF LDMOS NFET is for RF Power Amplifier (PA) and power management applications. The RF LDMOS NFET has demonstrated a drain-source turn-on resistance (R ds,on ) of 1.45ohm-mm, a cutoff frequency (Ft) greater tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2057252fdf237930e331e1b778c86b65
https://doi.org/10.1109/icsict.2014.7021359
https://doi.org/10.1109/icsict.2014.7021359
Autor:
Rick Phelps, Theodode Letavic, Natalie B. Feilchenfeld, Donald J. Cook, Michael J. Zierak, Santosh Sharma, Yun Shi
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
This paper presents complimentary 85V-rated LDMOS devices integrated in a 180nm power management technology platform. The devices are fabricated using a design technique which utilizes tapered dielectric regions in combination with patterned floating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4de0de10eba9b1521b7501d9f36fd0d8
https://doi.org/10.1109/ispsd.2013.6694423
https://doi.org/10.1109/ispsd.2013.6694423
Autor:
John J. Ellis-Monaghan, Natalie B. Feilchenfeld, James S. Dunn, Yun Shi, Rick Phelps, Ted Letavic, Donald J. Cook, Crystal M. Hedges, Santosh Sharma
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
A novel JFET redesign of a laterally scaled P-LDMOS device is presented. The P-LDMOS device has excellent Rsp as it is scaled from 90V to 170V operation. This P-LDMOS design is modified to produce a 100V PJFET with good turn-off characteristics and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03861133e67c3e00aac7c5234ba56c88
https://doi.org/10.1109/ispsd.2012.6229040
https://doi.org/10.1109/ispsd.2012.6229040
Autor:
Rick Phelps, Donald J. Cook, Helmut Nauschnig, Santosh Sharma, Georg Roerher, Alain Loiseau, Rainer Minixhofer, Theodore J. Letavic, Yun Shi, John-Ellis Monaghan, James S. Dunn, Natalie B. Feilchenfeld, Christopher Lamothe
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
This paper presents a 20V-rated planar dual gate oxide NLDMOS power device structure fabricated in a 180nm power management technology. The performance of the planar dual gate device structure is compared to a conventional STI-based device and it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0e20dcf055204e8d650f75d8097771
https://doi.org/10.1109/ispsd.2012.6229107
https://doi.org/10.1109/ispsd.2012.6229107
Autor:
Martin Knaipp, Hubert Enichlmair, Yun Shi, Jong Mun Park, Natalie B. Feilchenfeld, Rainer Minixhofer
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
This work reports the hot-carrier (HC) behavior and specific on-resistance (R on,sp ) optimization of 20∼60 V p-channel LDMOS transistors implemented in a 180 nm HV-CMOS technology. By precise control the implant dose and energy of a p-drift region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db23cf880b59eaf2892dd433e44897d
https://doi.org/10.1109/ispsd.2012.6229055
https://doi.org/10.1109/ispsd.2012.6229055
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and f T characteristics. The STI depth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a254f37e54661a5fc5a2f6272adadfeb
https://doi.org/10.1109/ispsd.2011.5890829
https://doi.org/10.1109/ispsd.2011.5890829