Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Natalia M. Shmidt"'
Autor:
Natalia M. Shmidt, Evgeniya I. Shabunina, Ekaterina V. Gushchina, Vasiliy N. Petrov, Ilya A. Eliseyev, Sergey P. Lebedev, Sergei Iu. Priobrazhenskii, Elena M. Tanklevskaya, Mikhail V. Puzyk, Alexander D. Roenkov, Alexander S. Usikov, Alexander A. Lebedev
Publikováno v:
Materials, Vol 16, Iss 16, p 5628 (2023)
The quality of graphene intended for use in biosensors was assessed on manufactured chips using a set of methods including atomic force microscopy (AFM), Raman spectroscopy, and low-frequency noise investigation. It is shown that local areas of resid
Externí odkaz:
https://doaj.org/article/e305f530a3584b99ba792cf333119be7
Autor:
Natalia M. Shmidt, Alexander S. Usikov, Evgeniia I. Shabunina, Alexey V. Nashchekin, Ekaterina V. Gushchina, Ilya A. Eliseev, Vasily N. Petrov, Mikhail V. Puzyk, Oleg V. Avdeev, Sergey A. Klotchenko, Sergey P. Lebedev, Elena M. Tanklevskaya, Yuri N. Makarov, Alexander A. Lebedev, Andrey V. Vasin
Publikováno v:
Biosensors, Vol 12, Iss 1, p 8 (2021)
In this study, we discuss the mechanisms behind changes in the conductivity, low-frequency noise, and surface morphology of biosensor chips based on graphene films on SiC substrates during the main stages of the creation of biosensors for detecting i
Externí odkaz:
https://doaj.org/article/a97a99b7117145a98aa3def0cce75c74
Autor:
Lin Cheng, Natalia M. Shmidt, Eugenia I. Shabunina, John W. Palmour, M.E. Levinshtein, P. A. Ivanov
Publikováno v:
Materials Science Forum. :559-562
The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, that at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of
Autor:
L. S. Kostina, Natalia M. Shmidt, Tatiana S. Agrunova, Konstantin B. Kostin, Helmut Föll, I. V. Grekhov
Publikováno v:
MRS Proceedings. 681
Bonding of silicon surfaces in aqueous solution of compounds containing III and IV impurities was performed for the first time. It was observed that the presence of aluminum at the bonding interface improved structural quality of the interface. This