Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Nataša, Vujičić"'
Autor:
Dino Novko, Borna Pielić, Carsten Busse, Iva Šrut Rakić, Jiaqi Cai, Robin Ohmann, Marin Petrović, Mario Basletić, Nataša Vujičić, Marko Kralj
Publikováno v:
ACS Applied Materials & Interfaces. 13:50552-50563
Growth of 2D materials under ultrahigh-vacuum (UHV) conditions allows for an in situ characterization of samples with direct spectroscopic insight. Heteroepitaxy of transition-metal dichalcogenides (TMDs) in UHV remains a challenge for integration of
Autor:
Borna Radatović, Valentino Jadriško, Sherif Kamal, Marko Kralj, Dino Novko, Nataša Vujičić, Marin Petrović
Publikováno v:
ACS applied materialsinterfaces. 14(18)
A major challenge in the investigation of all 2D materials is the development of synthesis protocols and tools which would enable their large-scale production and effective manipulation. The same holds for borophene, where experiments are still large
Autor:
Valentino Jadriško, Borna Radatović, Borna Pielić, Christoph Gadermaier, Marko Kralj, Nataša Vujičić
Two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors, with MoS2 as the most widely researched one, have large potential for development of novel devices. This calls for scalable and controllable fabrication of TMD monolayers and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f94f5a98f2e9290c5caaedc4fe45da5b
https://doi.org/10.1016/j.flatc.2022.100397
https://doi.org/10.1016/j.flatc.2022.100397
Publikováno v:
Materials Chemistry and Physics. 296:127185
Semiconducting transition metal dichalcogenides (TMDs) combine strong light-matter interaction with good chemical stability and scalable fabrication techniques, and are thus excellent prospects for optoelectronic, photonic and light-harvesting applic
Autor:
Borna, Pielić, Dino, Novko, Iva Šrut, Rakić, Jiaqi, Cai, Marin, Petrović, Robin, Ohmann, Nataša, Vujičić, Mario, Basletić, Carsten, Busse, Marko, Kralj
Publikováno v:
ACS applied materialsinterfaces. 13(42)
Growth of 2D materials under ultrahigh-vacuum (UHV) conditions allows for an in situ characterization of samples with direct spectroscopic insight. Heteroepitaxy of transition-metal dichalcogenides (TMDs) in UHV remains a challenge for integration of
Autor:
Nataša Vujičić, Matej Prijatelj, Iacopo Tempra, Stefano Dal Conte, Dragan Mihailovic, Peter Topolovsek, Daniele Vella, Giulio Cerullo, Victor Vega-Mayoral, Tetiana Borzda, Eva A. A. Pogna, Christoph Gadermaier
Publikováno v:
Nanoscale
Semiconducting transition metal dichalcogenides (TMDs) have been applied as the active layer in photodetectors and solar cells, displaying substantial charge photogeneration yields. However, their large exciton binding energy, which increases with de
Autor:
Silvije Vdović, Nataša Vujičić
Publikováno v:
Matematičko fizički list
Volume 69
Issue 274
Volume 69
Issue 274
Autor:
Blanca Biel, Nataša Vujičić, Fabio Faraguna, Pablo Pou, Borna Pielić, Aurelio Gallardo, Marko Kralj, Ida Delač Marion, Davor Čapeta
MoS2 monolayer samples were synthesized on a SiO2/Si wafer and transferred to Ir(111) for nano- scale characterization. The samples were extensively characterized during every step of the transfer process, and MoS2 on the final substrate was examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d507e972b290c342a3e593e373cb7b8f
https://www.bib.irb.hr/951966
https://www.bib.irb.hr/951966
Autor:
Silvije Vdović, Nataša Vujičić
Publikováno v:
Kemija u industriji : Časopis kemičara i kemijskih inženjera Hrvatske
Volume 67
Issue 11-12
Volume 67
Issue 11-12
Autor:
Martin Hell, Marko Kralj, Nataša Vujičić, Nihit Saigal, Boris V. Senkovskiy, Davor Čapeta, Isabelle Wielert, Alexander Grüneis
Publikováno v:
Applied Physics Letters
The effect of lithium atoms' evaporation on the surface of monolayer MoS2 grown on SiO2/Si substrate is studied using ultrahigh vacuum (∼10−11 mbar) Raman and circularly polarized photoluminescence spectroscopies, at low lithium coverage (up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc67d0aa2ba31004e267f60c121e7f6e
https://www.bib.irb.hr/1058773
https://www.bib.irb.hr/1058773