Výsledky vyhledávání - "Nassiopoulou AG"

Akademický článek

Autor: Nassiopoulou AG, Othonos Andreas, Lioudakis Emmanouil

Publikováno v: Nanoscale Research Letters, Vol 3, Iss 9, Pp 315-320 (2008)

AbstractWe have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding to energy levels

Externí odkaz: https://doaj.org/article/e82b2f6531b643b69d5a6114426808a5

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Akademický článek

Improved Surface-Enhanced-Raman Scattering Sensitivity Using Si Nanowires/Silver Nanostructures by a Single Step Metal-Assisted Chemical Etching.

Autor: Kochylas I; Section of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, Panepistimiopolis Zografou, 15784 Athens, Greece., Gardelis S; Section of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, Panepistimiopolis Zografou, 15784 Athens, Greece., Likodimos V; Section of Condensed Matter Physics, Department of Physics, National and Kapodistrian University of Athens, Panepistimiopolis Zografou, 15784 Athens, Greece., Giannakopoulos KP; Institute of Nanoscience and Nanotechnology, National Center for Scientific Research 'Demokritos', Agia Paraskevi, 15341 Athens, Greece., Falaras P; Institute of Nanoscience and Nanotechnology, National Center for Scientific Research 'Demokritos', Agia Paraskevi, 15341 Athens, Greece., Nassiopoulou AG; Institute of Nanoscience and Nanotechnology, National Center for Scientific Research 'Demokritos', Agia Paraskevi, 15341 Athens, Greece.

Publikováno v: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2021 Jul 06; Vol. 11 (7). Date of Electronic Publication: 2021 Jul 06.

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Two-Terminal Charge-Trapping WORM Memory Device Using Anodic Aluminum Oxide

Autor: Hourdakis E, Nassiopoulou Ag

Publikováno v: Journal of Nanoscience and Nanotechnology. 12:7968-7974

A two terminal write-once-read-many-times (WORM) memory device based on charge trapping near the interface of anodic aluminum oxide and p+Si is demonstrated. An investigation of the memory properties as a function of the interface morphology is prese

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6129ed7fb548edf89c7952e6d4a43219
https://doi.org/10.1166/jnn.2012.6604

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Two-Silicon-Nanocrystal Layer Memory Structure with Improved Retention Characteristics

Autor: Salonidou A, Nassiopoulou Ag

Publikováno v: Journal of Nanoscience and Nanotechnology. 7:368-373

It was demonstrated in the literature that the use of self-aligned doubly-stacked Si dots improves retention characteristics of a nanocrystal memory. In this paper, we show that a similar effect may be obtained by using two distinct layers of silicon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aebaac84c60ffaa2ce9372c92e1fcecd
https://doi.org/10.1166/jnn.2007.18037

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Influence of Magnetic Field on Electromagnetic Instabilities in Semiconductor Superlattices

Autor: Tarkhanyan Rh, Nassiopoulou Ag

Publikováno v: Journal of Nanoscience and Nanotechnology. 4:1085-1094

Electromagnetic instability criteria in semiconductor superlattices (SL) in the region of a negative differential conductivity (NDC) are studied in the presence of a static transverse field. The regimes with vertical constant electric field in a "sho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eee520701e3f70d10b7f1aeb60c2df6e
https://doi.org/10.1166/jnn.2004.128

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Electromagnetic Instability of Surface Waves in Semiconductor Superlattices

Autor: Nassiopoulou Ag, Tarkhanyan Rh

Publikováno v: Journal of Nanoscience and Nanotechnology. 3:549-554

It is shown that in semiconductor superlattices surface electromagnetic waves traveling in the direction parallel to the external static electric field may become unstable. This instability manifests itself in the emission of electromagnetic waves. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f67cdcd672daad7e495f42b22f7d3cc
https://doi.org/10.1166/jnn.2003.218

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Akademický článek

Study of Si Nanowires Produced by Metal-Assisted Chemical Etching as a Light-Trapping Material in n-type c-Si Solar Cells.

Autor: Leontis I; Institute of Nanoscience and Nanotechnology (INN), NCSR Demokritos, Patriarchou Grigoriou & Neapoleos 27, Aghia Paraskevi, 153 10 Athens, Greece., Botzakaki MA; Department of Physics, University of Patras, 26 504 Rion, Greece., Georga SN; Department of Physics, University of Patras, 26 504 Rion, Greece., Nassiopoulou AG; Institute of Nanoscience and Nanotechnology (INN), NCSR Demokritos, Patriarchou Grigoriou & Neapoleos 27, Aghia Paraskevi, 153 10 Athens, Greece.

Publikováno v: ACS omega [ACS Omega] 2018 Sep 10; Vol. 3 (9), pp. 10898-10906. Date of Electronic Publication: 2018 Sep 10 (Print Publication: 2018).

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