Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Naruhisa Miura"'
Autor:
Tomokatsu Watanabe, Yutaka Fukui, Shiro Hino, Shingo Tomohisa, Naruhisa Miura, Kazuyasu Nishikawa
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 23:99-108
Autor:
Takaaki Tominaga, Toshiaki Iwamatsu, Yukiyasu Nakao, Hiroyuki Amishiro, Hiroshi Watanabe, Naruhisa Miura, Satoshi Yamakawa, Shuhei Nakata
Publikováno v:
Materials Science Forum. 1062:447-451
The influence of the recovery characteristics on the switching behavior of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with different switching speeds was investigated. A comparative analysis of the devices with different recover
Autor:
Takaaki Tominaga, Toshiaki Iwamatsu, Yukiyasu Nakao, Hiroyuki Amishiro, Hiroshi Watanabe, Shingo Tomohisa, Naruhisa Miura, Shuhei Nakata
Publikováno v:
IEEE Transactions on Electron Devices. 69:285-290
Publikováno v:
IEEE Transactions on Electron Devices. 68:6321-6329
Publikováno v:
Materials Science Forum. 1004:565-570
We used the POCl3 gate technique for the fabrication of 4H-SiC vertical MOSFETs, and examined its effect on the VTH-RON tradeoff and the compatibility with device fabrication. The gate oxide film was formed by thermal dry O2 oxidation followed by POC
Autor:
Hatta Hideyuki, Koketsu Hidenori, Katsutoshi Sugawara, Yasuhiro Kagawa, Shingo Tomohisa, Rina Tanaka, Fukui Yutaka, Miyata Yusuke, Hiroyoshi Suzuki, Naruhisa Miura, Kensuke Taguchi
Publikováno v:
Materials Science Forum. 1004:770-775
Gate oxide reliability of a trench-gate SiC MOSFET can be improved by incorporating a gate protection structure, but the resulting parasitic JFET resistance is one major drawback. For reduction of on-resistance, a new method of localized high-concent
Autor:
Yohei Mitsui, Naruhisa Miura, Shiro Hino, Koutarou Kawahara, Junichi Nakashima, Takaaki Tominaga, Shingo Tomohisa
Publikováno v:
Materials Science Forum. 1004:801-807
A total loss reduction of 3.3 kV power module by using SiC-MOSFET embedding SBD has been demonstrated through the investigation of DC characteristics and switching characteristics. Despite 1.1 times larger on-resistance than that of conventional SiC-
Autor:
Shingo Tomohisa, Naoyuki Kawabata, Hiroki Niwa, Kohei Ebihara, Naruhisa Miura, Kazuya Konishi, Kotaro Kawahara, Miyata Yusuke, Kenji Hamada, Hiroaki Okabe
Publikováno v:
Materials Science Forum. 1004:905-910
In this study, to demonstrate the potential of the SiC-IGBT for high voltage application, we fabricated 13 kV class SiC-IGBT, and evaluated static characteristics and the ruggedness. The on-state forward voltage of 5.2 V at a collector current densit
Autor:
Kohei Adachi, Shingo Tomohisa, Hiroyuki Fujisawa, Hajime Okumura, Shi Yang Ji, Yasuyuki Kawada, Ryoji Kosugi, Naruhisa Miura, Yoshiyuki Yonezawa
Publikováno v:
Materials Science Forum. 1004:445-450
We evaluated crystalline quality of SiC p/n column layers over 20 μm thickness formed by trench-filling-epitaxial growth. Although threading dislocation density of trench-filling-epitaxial layer is almost same as flat n-type epitaxial layer, threadi
Autor:
Hatta Hideyuki, Miyata Yusuke, Rina Tanaka, Koketsu Hidenori, Yasuhiro Kagawa, Kensuke Taguchi, Hiroyoshi Suzuki, Naruhisa Miura, Katsutoshi Sugawara, Shingo Tomohisa, Fukui Yutaka
Publikováno v:
Materials Science Forum. 1004:764-769
A trench gate SiC-MOSFET with BPW grounded by tilted Al implantation is developed in order to optimize the cell design and process for grounding the BPW in a more simple manner. From evaluation of static characteristics, the MOSFETs with sidewall reg