Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Nari Ahn"'
Insights into structural defect formation in individual InP/ZnSe/ZnS quantum dots under UV oxidation
Autor:
Hayeon Baek, Sungsu Kang, Junyoung Heo, Soonmi Choi, Ran Kim, Kihyun Kim, Nari Ahn, Yeo-Geon Yoon, Taekjoon Lee, Jae Bok Chang, Kyung Sig Lee, Young-Gil Park, Jungwon Park
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract InP/ZnSe/ZnS quantum dots (QDs) stand as promising candidates for advancing QD-organic light-emitting diodes (QLED), but low emission efficiency due to their susceptibility to oxidation impedes applications. Structural defects play important
Externí odkaz:
https://doaj.org/article/35d1be9ac7684aebad5c80c773fec27e
Elasto-inertial microfluidic separation of microspheres with submicron resolution at high-throughput
Publikováno v:
Microsystems & Nanoengineering, Vol 10, Iss 1, Pp 1-14 (2024)
Abstract Elasto-inertial microfluidic separation offers many advantages including high throughput and separation resolution. Even though the separation efficiency highly depends on precise control of the flow conditions, no concrete guidelines have b
Externí odkaz:
https://doaj.org/article/656784a80ea34950aaf7c70d38cb85b9
Autor:
Mihyang Sheen, Yunhyuk Ko, Dong-uk Kim, Jongil Kim, Jin-ho Byun, YongSeok Choi, Jonghoon Ha, Ki Young Yeon, Dohyung Kim, Jungwoon Jung, Jinyoung Choi, Ran Kim, Jewon Yoo, Inpyo Kim, Chanwoo Joo, Nami Hong, Joohee Lee, Sang Ho Jeon, Sang Ho Oh, Jaekwang Lee, Nari Ahn, Changhee Lee
Publikováno v:
Nature. 608:56-61
Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e095a4f388ff82d25742e7daa30c23f9
https://doi.org/10.1038/s41586-022-04933-5
https://doi.org/10.1038/s41586-022-04933-5
Autor:
Jonghyun Kim, Woosuk Sohng, Seung Jee Yang, Young-Gil Park, Kuhwan Chung, Kyeomryong Kim, Yeonguk Lee, Nari Ahn, Kyung Joon Cha, Hoeil Chung
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3048d7aac52fd98162857556c9e4319
https://doi.org/10.2139/ssrn.4334025
https://doi.org/10.2139/ssrn.4334025
Publikováno v:
SID Symposium Digest of Technical Papers. 53:900-902
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f037d40e5223f010fef85b3994153f67
https://doi.org/10.1002/sdtp.15639
https://doi.org/10.1002/sdtp.15639
Autor:
Doo-Hyoung Lee, Uiyoung Park, Dongyeon Cho, Nari Ahn, Byulnim Park, Myeongkyu Park, Hyunsang Seo
Publikováno v:
SID Symposium Digest of Technical Papers. 52:1204-1207
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::421f648b0736fdcdf54f3b5596334fbe
https://doi.org/10.1002/sdtp.14913
https://doi.org/10.1002/sdtp.14913
Publikováno v:
SID Symposium Digest of Technical Papers. 51:1379-1382
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6423806421d11b29786e046a13fdb6b0
https://doi.org/10.1002/sdtp.14142
https://doi.org/10.1002/sdtp.14142
Publikováno v:
SID Symposium Digest of Technical Papers. 52:1088-1090
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b1c7e97c36da0afc6a9c44cff628eb7
https://doi.org/10.1002/sdtp.14882
https://doi.org/10.1002/sdtp.14882
Autor:
Yangsun Kim, Jooyeon Oh, Dongjin Shin, Hyunsoo Moon, Man Jae Park, Nari Ahn, Chan-jae Lee, Yoonseok Oh
Publikováno v:
SID Symposium Digest of Technical Papers. 51:2093-2095
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35e479c787b30a0a8edd0f6dffa1b76a
https://doi.org/10.1002/sdtp.14334
https://doi.org/10.1002/sdtp.14334
Publikováno v:
Journal of Surface Analysis. 17:260-263
We applied conductive Atomic Force Microscopy (c-AFM) to characterize the electrical properties of low-temperature polycrystalline silicon. Current distribution and current-voltage characteristics are recorded using conductive-diamond covered AFM tip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c840ce30c75d39b9c6ab7cab5b3953
https://doi.org/10.1384/jsa.17.260
https://doi.org/10.1384/jsa.17.260