Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Narendra, Parihar"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1281-1288 (2020)
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold voltage shift (ΔVT) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs and SOI FinFETs. BAT uses uncorrelated contributions from the trap generat
Externí odkaz:
https://doaj.org/article/309e7036b1174d82a2c68859e89cd321
Publikováno v:
Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering). 16:407-416
Background: Coordinate Rotation Digital Computer (CORDIC) can be used for computing trigonometric functions like sine and cosine for which it iterates over a for loop and performs rotation of the input angle. Methods: On the basis of the condition, i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac4dbcaa6154ef0d5e46a7201a9354b
https://doi.org/10.2174/2352096516666221128100318
https://doi.org/10.2174/2352096516666221128100318
Publikováno v:
Research Journal of Pharmacology and Pharmacodynamics. :99-109
Novel coronavirus also known as severe acute respiratory syndrome Coronavirus 2 (SARS-CoV-2) was emerged from Wuhan, China and have taken catastrophic form globally. India being a dense populated country is also affected by it’s deadly infection. B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::776fa2c87ff8ac76247616b7889095a2
https://doi.org/10.52711/2321-5836.2022.00018
https://doi.org/10.52711/2321-5836.2022.00018
Autor:
Suraj S. Cheema, Nirmaan Shanker, Li-Chen Wang, Cheng-Hsiang Hsu, Shang-Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gomez, Wriddhi Chakraborty, Wenshen Li, Jong-Ho Bae, Steve K. Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seunggeol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, Ramamoorthy Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mohamed, Chenming Hu, Sayeef Salahuddin
Publikováno v:
Nature, vol 604, iss 7904
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental changein the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4fe30529e321261100d5a1d53aa55c9
https://doi.org/10.1038/s41586-022-04425-6
https://doi.org/10.1038/s41586-022-04425-6
Autor:
E. Dupuy, Geert Mannaert, Ben Kaczer, Jacopo Franco, Vincent De Heyn, Narendra Parihar, Anne Vandooren, Gaspard Hiblot, Sylvain Baudot, Abdelkarim Mercha
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:192-198
This work reports on charging damage induced by gate antennae in high- $\kappa $ (HK) Replacement Metal Gate (RMG) technology for the HK-first and HK-last integration flows, comparing plate and comb layouts. For the HK-first devices, a significant de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc0947d9b4776bf4c36e60ab5ff38ba
https://doi.org/10.1109/tdmr.2021.3073473
https://doi.org/10.1109/tdmr.2021.3073473
Autor:
Satyam Kumar, Dimple Kochar, Nilotpal Choudhury, Souvik Mahapatra, Narendra Parihar, Tarun Samadder
Publikováno v:
IEEE Transactions on Electron Devices. 68:485-490
A deterministic reaction-diffusion–drift model is used for the time kinetics of bulk gate insulator trap generation in p-channel Field Effect Transistors (FETs) under inversion stress. The consistency of the deterministic and stochastic versions of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af221e765c4dd84b3a0db0053c7fafbf
https://doi.org/10.1109/ted.2020.3045960
https://doi.org/10.1109/ted.2020.3045960
Publikováno v:
IEEE Transactions on Electron Devices. 67:4741-4748
A stochastic reaction–diffusion drift model is used to simulate the time kinetics of interface and bulk oxide traps responsible for bias temperature instability (BTI), stress-induced leakage current (SILC), and time-dependent dielectric breakdown (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e8c0365f35673e4c3fcc2511f6d3249
https://doi.org/10.1109/ted.2020.3020533
https://doi.org/10.1109/ted.2020.3020533
Autor:
Souvik Mahapatra, Narendra Parihar
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:4-23
Threshold voltage shift ( $\Delta \text{V}_{\mathrm{ T}}$ ) due to Negative Bias Temperature Instability (NBTI) in p-MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The $\Delta \text{V}_{\mathrm{ T}}$ time kinetics during and after DC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d2e24ac4428026e304de73131ef5bb8
https://doi.org/10.1109/tdmr.2020.2967696
https://doi.org/10.1109/tdmr.2020.2967696
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1281-1288 (2020)
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold voltage shift ( $\Delta {\mathrm{ V}}_{\mathrm{ T}}$ ) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs and SOI FinFETs. BAT uses uncorrelated c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c2d44f1b94f7a18983f5495235df75a
https://ieeexplore.ieee.org/document/9195441/
https://ieeexplore.ieee.org/document/9195441/
Publikováno v:
Solid-State Electronics. 200:108549
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b83f884366588249244440ed9e7d709
https://doi.org/10.1016/j.sse.2022.108549
https://doi.org/10.1016/j.sse.2022.108549