Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Naren Yellai"'
Autor:
Kevin Drayton, Matthew Sendelbach, Alexander Elia, Padraig Timoney, Susan Emans, Darren Zingerman, Marjorie Cheng, Benny Vilge, Charles Kang, Timothy Hughes, Taher Kagalwala, Naren Yellai, Alok Vaid, Jason Emans, Ronald Fiege
Publikováno v:
2019 30th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In semiconductor manufacturing, the time it takes for wafers to process through the line is of utmost importance. Any delay in the processing of these wafers is very costly to the foundry and the end customer. Cycle time is one of the key metrics tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c28b5540552f4f3f687d57735f5ebe1
https://doi.org/10.1109/asmc.2019.8791789
https://doi.org/10.1109/asmc.2019.8791789
Autor:
Paul Isbester, Houssam Lazkani, Jonathan Hurley, Haibo Liu, Michael Shifrin, Taher Kagalwala, Naren Yellai, Charles Kang, Edward Reis, Yoav Etzioni, Padraig Timoney
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
In recent years, the combination of device scaling, complex 3D device architecture and tightening process tolerances have strained the capabilities of optical metrology tools to meet process needs. Two main categories of approaches have been taken to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::657115a084d92440f6a588ab92d8d133
https://doi.org/10.1117/12.2300167
https://doi.org/10.1117/12.2300167
Autor:
Naren Yellai, Alok Vaid, Roy Koret, Haibo Liu, Paul Isbester, Byeong Cheol Kang, Padraig Timoney, Susan Ng-Emans, Matt Sendelbach, Oram Gedalia, Marjorie Cheng
Publikováno v:
SPIE Proceedings.
Scaling of interconnect design rules in advanced nodes has been accompanied by a reducing metrology budget for BEOL process control. Traditional inline optical metrology measurements of BEOL processes rely on 1-dimensional (1D) film pads to character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c585a1cec70e6994702211af7e769dbf
https://doi.org/10.1117/12.2261452
https://doi.org/10.1117/12.2261452
Autor:
Yinon Katz, Paul Isbester, Ovadia Ilgayev, Naren Yellai, Taher Kagalwala, Matthew Sendelbach, Aron Cepler, Ilya Osherov, Charles Kang, L. Tamam, Sridhar Mahendrakar, Alok Vaid, Mihael Ko
Publikováno v:
SPIE Proceedings.
Device scaling has not only driven the use of measurements on more complex structures, in terms of geometry, materials, and tighter ground rules, but also the need to move away from non-patterned measurement sites to patterned ones. This is especiall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4891f65c559fead2354865582d562751
https://doi.org/10.1117/12.2261419
https://doi.org/10.1117/12.2261419
Autor:
Byung Cheol (Charles) Kang, Michael Lenahan, Mainul Hossain, Naren Yellai, Paul Isbester, Tom Larson, Prasad Dasari, Givantha Iddawela, Mark Klare, Alok Vaid, Wei Ti Lee, Michael Kwan, Matthew Sendelbach, Padraig Timoney, Sridhar Mahendrakar, Heath Pois, Cornel Bozdog, Abner Bello
Publikováno v:
SPIE Proceedings.
Complexity of process steps integration and material systems for next-generation technology nodes is reaching unprecedented levels, the appetite for higher sampling rates is on the rise, while the process window continues to shrink. Current thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7056ac32abc49758e2e386edc213fe1
https://doi.org/10.1117/12.2220299
https://doi.org/10.1117/12.2220299
Autor:
Aron Cepler, Michael V. Aquilino, Charles Kang, Laertis Economikos, Naren Yellai, R. Dasaka, Taher Kagalwala
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Shrinking process windows for advanced processing of complex devices, sub-14nm, require advanced topography control. Within-wafer topography variations impact the uniformity of subsequent layers and can affect yield. Process tools can generally contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7344db5aa378af189a42f21906b70038
https://doi.org/10.1109/asmc.2015.7164454
https://doi.org/10.1109/asmc.2015.7164454
Autor:
Cornel Bozdog, Eyal Grubner, Alok Vaid, Naren Yellai, Toru Ikegami, Masahiko Ikeno, Alex Elia, Padraig Timoney, Charles Kang, Carmen Osorio
Publikováno v:
SPIE Proceedings.
Hybrid metrology (HM) is the practice of combining measurements from multiple toolset types in order to enable or improve metrology for advanced structures. HM is implemented in two phases: Phase-1 includes readiness of the infrastructure to transfer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67437c0de0c7470e9514d6b529b8114e
https://doi.org/10.1117/12.2087233
https://doi.org/10.1117/12.2087233
Autor:
Jamie Tsai, Sudhir Baral, Alok Vaid, Roy Kort, Naren Yellai, Byungcheol Kang, Padraig Timoney, Economikos Laertis, Haibo Lu, Prasad Dasari, Paul Isbester
Publikováno v:
SPIE Proceedings.
Copper interconnects have been adopted in advanced semiconductor manufacturing due to benefits of reduced RC delay, cross talk and power consumption. With each technology node, interconnects reduce in size resulting in increased line resistivity, a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::264ce1e8e5157fc59841800af0ae3b93
https://doi.org/10.1117/12.2087320
https://doi.org/10.1117/12.2087320
Autor:
Cornel Bozdog, Taher Kagalwala, Prasad Dasari, Paul Isbester, Alok Vaid, Michael Lenahan, Michael Shifrin, Yoav Etzioni, Aron Cepler, Naren Yellai, Sridhar Mahendrakar, Fang Fang
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 15:044004
Advanced technology nodes, 10 nm and beyond, employing multipatterning techniques for pitch reduction pose new process and metrology challenges in maintaining consistent positioning of structural features. A self-aligned quadruple patterning (SAQP) p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a245597cbc01f5ac01dfd76ae2239555
https://doi.org/10.1117/1.jmm.15.4.044004
https://doi.org/10.1117/1.jmm.15.4.044004