Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Narayanan Ramanan"'
Publikováno v:
IEEE Transactions on Electron Devices. 62:546-553
Reliability of dielectrics is a critical concern in GaN metal-oxide-semiconductor-heterojunction-field-effect transistor (MOS-HFET) devices for use in high-voltage power and RF applications. Accurate characterization of interface traps is essential t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::136a10f35b2442d132cf2eeb911e2d2b
https://doi.org/10.1109/ted.2014.2382677
https://doi.org/10.1109/ted.2014.2382677
Publikováno v:
IEEE Transactions on Electron Devices. 61:2012-2018
Using a simple simulation framework, it is shown that a passivation dielectric that minimizes surface leakage and creates a high density of shallow traps at the surface is vital to minimize the formation of the virtual gate and eliminate AlGaN/GaN HE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0279a1ebf56384a0b190912da683c319
https://doi.org/10.1109/ted.2014.2313814
https://doi.org/10.1109/ted.2014.2313814
Publikováno v:
physica status solidi c. 11:875-878
The enhancement mode metal oxide semiconductor heterojuntion field effect transistor with a flash gate stack (Flash MOS-HFET) device structure is demonstrated as the switching device in a boost converter circuit operating at 1 MHz. The Flash MOS-HFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afbe8d02a74625573b295b9840b8c0af
https://doi.org/10.1002/pssc.201300547
https://doi.org/10.1002/pssc.201300547
Autor:
Paul D. Franzon, Veena Misra, Biplab Sarkar, Narayanan Ramanan, Neil Di Spigna, Bongmook Lee, Srikant Jayanti
Publikováno v:
IEEE Electron Device Letters. 35:48-50
Dual floating gate flash memory has been fabricated and characterized to show dynamic operation, non-volatile operation, and simultaneous dynamic and non-volatile operation. The gate stack consists of a thin dielectric separating two floating gates s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a50314d30b933c411907947c1ae1168a
https://doi.org/10.1109/led.2013.2289751
https://doi.org/10.1109/led.2013.2289751
Autor:
Narayanan Ramanan, Veena Misra
Publikováno v:
IEEE Electron Device Letters. 32:1379-1381
Bulk-Si CMOS technology has been consistently improving for over 40 years, following Moore's law, by gate length scaling. In this letter, we present a novel charge-based multistate transistor device on the AlGaN/GaN system which uses a given gate len
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a1500fce9da8fa9105b5ad0acbdf284
https://doi.org/10.1109/led.2011.2163149
https://doi.org/10.1109/led.2011.2163149
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Characterization of traps at a dielectric/AlGaN interface is critical to evaluate the reliability of the dielectric for the gate stack or passivation of an AlGaN/GaN based MOS Heterojunction Field Effect Transistor (MOSHFET). In this work, we propose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3b4155b090b0ae04b34b30ce6e32de6
https://doi.org/10.1109/ispsd.2014.6856052
https://doi.org/10.1109/ispsd.2014.6856052
Publikováno v:
Semiconductor Science and Technology. 31:035016
Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4ed3a35d63e5eda9f363eb0e6d31fcc
https://doi.org/10.1088/0268-1242/31/3/035016
https://doi.org/10.1088/0268-1242/31/3/035016
Publikováno v:
Semiconductor Science and Technology. 30:125017
Dielectrics by atomic layer deposition (ALD) are sought after for fabricating AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors (MOS-HFETs) for power applications. The ideal gate dielectric is required to suppress gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b93ccb0e9aa48d3c1fc5c647e37bc054
https://doi.org/10.1088/0268-1242/30/12/125017
https://doi.org/10.1088/0268-1242/30/12/125017
Publikováno v:
Applied Physics Letters. 106:243503
Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9455594d30a41df1fe691f6a5d085e78
https://doi.org/10.1063/1.4922799
https://doi.org/10.1063/1.4922799
Publikováno v:
Semiconductor Science and Technology. 28:074004
In order to minimize ac–dc dispersion, reduce gate leakage and maximize ac transconductance, there is a critical need to identify optimal interfaces, low-k passivation dielectrics and high-k gate dielectrics. In this paper, an investigation of diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7736c3b2ddac935213039709a63fa3c
https://doi.org/10.1088/0268-1242/28/7/074004
https://doi.org/10.1088/0268-1242/28/7/074004