Zobrazeno 1 - 10
of 493
pro vyhledávání: '"Narayanamurti V"'
Autor:
Shalish I, Seryogin G, Yi W, Bao JM, Zimmler MA, Likovich E, Bell DC, Capasso F, Narayanamurti V
Publikováno v:
Nanoscale Research Letters, Vol 4, Iss 6, Pp 532-537 (2009)
Abstract We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H–InN singl
Externí odkaz:
https://doaj.org/article/538ad6353b0647a595a3866069c0a3ba
Publikováno v:
Phys. Rev. B 79, 205320 (2009)
We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, $\nu$. At large-$\nu$, the dark study indicates several distinct phase relations ("Type-1", "Type-2", and
Externí odkaz:
http://arxiv.org/abs/0906.0032
An experimental study of the high mobility GaAs/AlGaAs system at large-$\nu$ indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which is charac
Externí odkaz:
http://arxiv.org/abs/cond-mat/0606517
Scanning tunneling microscopy
Comment: This paper has been withdrawn by the author
Comment: This paper has been withdrawn by the author
Externí odkaz:
http://arxiv.org/abs/cond-mat/0512643
A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases with bias
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407489
Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show, these systems exhibit an anisotropic form of metal-insulator transition. Their elementary
Externí odkaz:
http://arxiv.org/abs/cond-mat/0311081
Publikováno v:
Phys. Rev. Lett. 92, 146801 (2004)
We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a $f$-independe
Externí odkaz:
http://arxiv.org/abs/cond-mat/0311010
Publikováno v:
Phys. Rev. B 69, 161306 (2004)
We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small r
Externí odkaz:
http://arxiv.org/abs/cond-mat/0310474
Publikováno v:
Proceedings of 15th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, Oxford, 5-9 August 2002, Institute of Physics Conference Series Number 171, edited by A. R. Long and J. H. Davies (IOP, Bristol, 2003) 1.6
The application of the quantum mechanical properties of physical systems to realize novel computational schemes and innovative device functions have been topics of recent interest. Proposals for associated devices are to be found in diverse branches
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308501
Publikováno v:
Phys. Rev. B 70, 155310 (2004)
High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance m
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306388