Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Naozumi Fujiwara"'
Publikováno v:
ECS Transactions. 41:215-220
In this paper, effectiveness of freezing process on particle removal efficiency (PRE) for various sizes and polycrystalline silicon line damages was studied by a method which consists of freezing and melting water film on the wafer. It was found that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc01ee2a65e345eb315f4006bf41a6fa
https://doi.org/10.1149/1.3630846
https://doi.org/10.1149/1.3630846
Autor:
Masao Takahashi, Martin Kopáni, Naozumi Fujiwara, Hikaru Kobayashi, Luc Ortega, Emil Pinčík, Róbert Brunner, M. Jergel
Publikováno v:
Applied Surface Science. 252:7722-7725
Dominant aim of the paper was to verify the existence of the Si m H n clusters in a-Si:H layers. Thin layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on both glass and crystalline silicon substrates. Their IR and structural
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fcc78c1fb74d2d0edc9fc3ff71bfcf9
https://doi.org/10.1016/j.apsusc.2006.03.063
https://doi.org/10.1016/j.apsusc.2006.03.063
Autor:
Yueh-Ling Liu, Shigeki Imai, Masao Takahashi, Hikaru Kobayashi, Naozumi Fujiwara, Hitoo Iwasa
Publikováno v:
Surface Science. 600:1165-1169
A Si cleaning method has been developed by use of potassium cyanide (KCN) dissolved in methanol. When silicon dioxide (SiO2)/Si(1 0 0) specimens with 1014 atom/cm2 order copper (Cu) contaminants are immersed in 0.1 M KCN solutions of methanol at 25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a70e0230940a571e6b2ac3390a65aa1c
https://doi.org/10.1016/j.susc.2006.01.017
https://doi.org/10.1016/j.susc.2006.01.017
Publikováno v:
Solid State Communications. 137:263-267
Absract Hydrogen cyanide (HCN) aqueous solutions are found to possess a great ability of removal of copper contaminants on Si as well as a Si defect passivation effect. Copper (Cu) contaminants of 10 13 cm −2 order concentrations can be reduced bel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e06db15440b52d370af5c2bdf109fdc4
https://doi.org/10.1016/j.ssc.2005.11.027
https://doi.org/10.1016/j.ssc.2005.11.027
Autor:
Helena Gleskova, Jarmila Müllerová, R. Jurani, Luc Ortega, M. Jergel, Milan Mikula, Masao Takahashi, J. Rusnák, M. Kral, Ciro Falcony, Hikaru Kobayashi, Naozumi Fujiwara, Michal Kučera, Emil Pinčík, Róbert Brunner, Miroslav Zahoran
Publikováno v:
Applied Surface Science. 235:351-363
This paper deals with the photoluminescence, structural and electrical properties of chemically passivated a-Si:H based thin films and corresponding thin film solar cells. The structures were chemically passivated in three types of KCN and HCN soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d64f684d59c5df1dc6932ae0d350478e
https://doi.org/10.1016/j.apsusc.2004.05.107
https://doi.org/10.1016/j.apsusc.2004.05.107
Autor:
Hikaru Kobayashi, Naozumi Fujiwara, Róbert Brunner, J. Rusnák, Martin Kopáni, Masao Takahashi, Emil Pinčík, Matej Jergel
Publikováno v:
Applied Surface Science. 235:364-371
KCN solution treatment of amorphous hydrogenated silicon (a-Si:H) is a new technique for passivation of Si dangling bonds, capable to eliminate the interface states as well as a part of the bulk defects. It is based on the formation of Si–CN bonds
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::284eab6ea3580c3bb1d3091bc82e491d
https://doi.org/10.1016/j.apsusc.2004.05.108
https://doi.org/10.1016/j.apsusc.2004.05.108
Autor:
Masao Takahashi, Hikaru Kobayashi, Takahiro Nakamura, Yueh-Ling Liu, Osamu Maida, Naozumi Fujiwara
Publikováno v:
Applied Surface Science. 235:372-375
The cleaning method using cyanide solutions has been developed to remove heavy metals such as copper (Cu) and nickel (Ni) from Si surfaces. Immersion of Si wafers with both Cu and Ni contaminants in potassium cyanide (KCN) solutions of methanol at ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::292a7bd4adbaa4d4999746046bfbfa65
https://doi.org/10.1016/j.apsusc.2004.05.109
https://doi.org/10.1016/j.apsusc.2004.05.109
Publikováno v:
Applied Surface Science. 258:8406-8408
From the analysis of IR spectra of double layer structures after KCN passivation the presence of four absorption bands at 720–810 cm −1 (assigned as Si C bond), 870–1060 cm −1 (assigned as Si H n and Si O bonds), 1930–2200 cm −1 (assigned
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11705c9848bc6f582423cb135281a17b
https://doi.org/10.1016/j.apsusc.2012.03.023
https://doi.org/10.1016/j.apsusc.2012.03.023
Publikováno v:
Langmuir. 17:5337-5342
Assemblies of palladium(II)−5,10,15,20-tetra(4-pyridyl)porphine (tpyp) complex were formed spontaneously at the toluene−water interface, when a tpyp toluene solution was contacted with a PdCl2 aqueous solution under an acidic condition. The inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::806b6c44a5eaed55edbdb611a263f1f8
https://doi.org/10.1021/la010259a
https://doi.org/10.1021/la010259a
Autor:
Róbert Brunner, Masao Takahashi, Helena Gleskova, Stanislav Jurečka, Jarmila Müllerová, Naozumi Fujiwara, Hikaru Kobayashi, Emil Pinčík, Matej Jergel
Publikováno v:
SPIE Proceedings.
The paper deals with investigation of electrical, structural and optical properties of very thin oxide/a-Si:H interfaces passivated by chemical treatment by KCN and HCN solutions. The oxide layers were prepared by thermal, chemical and plasma or ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a394e84e80ad3b7b765257a16979f7cd
https://doi.org/10.1117/12.608684
https://doi.org/10.1117/12.608684