Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Naoya Sashida"'
Autor:
Manabu Kojima, T. Gallagher, T. Rueckes, K. Kawabata, Junichi Watanabe, Hitoshi Saito, R. Sen, K. Hara, L. Cleveland, N. Leong, T. Tamura, Naoya Sashida, H. Luan, J. Ohno, A. Nakakubo, T. Shimoyama, H. Wada, A. Fujii, J. Seino
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
We developed 16 Mb 1T1R NRAM integrating CNTs resistor elements into the intermediate wirings of 55 nm CMOS. Excellent reliabilities were proven by the retention test at 150 °C extrapolated for 100 kh and the endurance test of 1E6 cycles. The switch
Autor:
Mitsuharu Nakazawa, Masaki Okuda, Kazuaki Takai, Hitoshi Saito, Satoru Mihara, Masato Matsumiya, Takashi Eshita, Tomoyuki Hori, Yukinobu Hikosaka, Ko Nakamura, Makoto Hamada, Shoichiro Kawashima, Soichiro Ozawa, Noboru Kosugi, Wensheng Wang, Tatsuya Sugimachi, Naoya Sashida
Publikováno v:
2015 IEEE International Memory Workshop (IMW).
We have developed a ferroelectric RAM (FRAM) with a low operation voltage of 1.2 V and a high switching endurance up to 1017 cycles. Our newly developed tripleprotection structured cell array, has constructed without an additional mask step, effectiv
Autor:
Tetsuya Nakajima, Sinji Nakashima, Tohru Takesima, Yoshiroh Obata, Hideyuki Noshiro, Andrew Kerry, Yamazaki Tatsuya, Moritaka Nakamura, Rika Shinohara, Murakami Takayuki, Souichirou Ozawa, Toshiyuki Teramoto, Chikai Ohono, Masahiko Imai, Kouji Tani, Naoya Sashida, Mitsuhiro Nakamura, Yuji Furumura, Rei Satomi, Hisashi Miyazawa, Yoshikazu Katoh, Kazuaki Takai, Inoue Kenichi
Publikováno v:
SPIE Proceedings.
We developed FRAM(FRAM is a registered trademark of Ramtron International Corporation that stands for FeRAM) technologies that are fully compatible with half-micron CMOS logic's. The technologies achieve 1T/1C FRAM cell 12.5um 2 in a size and 68k-FRA
Conference
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