Zobrazeno 1 - 10
of 170
pro vyhledávání: '"Naoya Okamoto"'
Autor:
Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 965-973 (2024)
This paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the use of InPbased metal–oxide–semiconductor high-electron-mobility transistor
Externí odkaz:
https://doaj.org/article/74698a919443403894f8fa8759ab55b2
Autor:
Yusuke Kumazaki, Shiro Ozaki, Yasuhiro Nakasha, Naoya Okamoto, Atsushi Yamada, Toshihiro Ohki
Publikováno v:
Applied Physics Express, Vol 17, Iss 8, p 086504 (2024)
This study describes high-power and high-efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) for future sub-terahertz wireless communications. A low-thermal-budget selective-area growth (SAG) process was developed to obtain l
Externí odkaz:
https://doaj.org/article/f48ba22100a04f2aad0f2c84cc53a687
Autor:
Hiroyuki K. M.Tanaka, Masaatsu Aichi, Szabolcs József Balogh, Cristiano Bozza, Rosa Coniglione, Jon Gluyas, Naoto Hayashi, Marko Holma, Jari Joutsenvaara, Osamu Kamoshida, Yasuhiro Kato, Tadahiro Kin, Pasi Kuusiniemi, Giovanni Leone, Domenico Lo Presti, Jun Matsushima, Hideaki Miyamoto, Hirohisa Mori, Yukihiro Nomura, Naoya Okamoto, László Oláh, Sara Steigerwald, Kenji Shimazoe, Kenji Sumiya, Hiroyuki Takahashi, Lee F. Thompson, Tomochika Tokunaga, Yusuke Yokota, Sean Paling, Dezső Varga
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Meteorological-tsunami-like (or meteotsunami-like) periodic oscillation was muographically detected with the Tokyo-Bay Seafloor Hyper-Kilometric Submarine Deep Detector (TS-HKMSDD) deployed in the underwater highway called the Trans-Tokyo Ba
Externí odkaz:
https://doaj.org/article/61398442f2d04bd7a2aac0203de3dd0d
Autor:
Junji Kotani, Kozo Makiyama, Toshihiro Ohki, Shiro Ozaki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, Yasuyuki Miyamoto
Publikováno v:
Electronics Letters, Vol 59, Iss 4, Pp n/a-n/a (2023)
Abstract This paper investigated the back‐barrier (BB) effect for gallium nitride (GaN)‐based high‐electron‐mobility transistors with an Fe‐doped buffer and Fe‐buffer + Indium gallium nitride (InGaN)‐BB structure. The authors found that
Externí odkaz:
https://doaj.org/article/e884dbfc5aef45eea2bf03ce48d6a2f8
Publikováno v:
Earth, Planets and Space, Vol 72, Iss 1, Pp 1-12 (2020)
Abstract Kusatsu–Shirane Volcano is an active Quaternary andesitic-to-dacitic volcano located in the Central Japan Arc. We conducted a detailed petrological investigation of orthopyroxene (opx)–magnetite (mt) symplectites associated with olivine
Externí odkaz:
https://doaj.org/article/f015dcb29be048e992c4579723f0c3b1
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085218-085218-5 (2020)
In this study, a p-GaAs0.4Sb0.6/n-InAs nanowire backward diode (NW BWD) with a large sensitivity of 706 kV/W, exceeding that of Schottky barrier diodes (SBDs), was developed for low-power microwave rectification at zero bias. The interband tunneling
Externí odkaz:
https://doaj.org/article/973da404739b443fb386720bce4d5cc4
Autor:
Takaaki Nagatomo, Ajendra K. Vats, Kyohei Matsuo, Shinya Oyama, Naoya Okamoto, Mitsuharu Suzuki, Tomoyuki Koganezawa, Masaaki Fuki, Sadahiro Masuo, Kaoru Ohta, Hiroko Yamada, Yasuhiro Kobori
Publikováno v:
ACS Physical Chemistry Au. 3:207-221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94e7d40571877a8c68da26bae0adcd71
https://doi.org/10.1021/acsphyschemau.2c00049
https://doi.org/10.1021/acsphyschemau.2c00049
Publikováno v:
IEEE Transactions on Electron Devices. 69:3073-3078
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e4ab660e959527a6649a9cd6fe672e
https://doi.org/10.1109/ted.2022.3169728
https://doi.org/10.1109/ted.2022.3169728
Autor:
Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe
Publikováno v:
IEICE Transactions on Electronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::658977e7621c4af6051d1c5f2e8fef40
https://doi.org/10.1587/transele.2022ecp5046
https://doi.org/10.1587/transele.2022ecp5046
Autor:
Masaru Sato, Hara Naoki, Keiji Watanabe, Yusuke Kumazaki, Masato Nishimori, Toshihiro Ohki, Naoya Okamoto
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:1909-1916
In this study, we investigated the heat dissipation characteristics of gallium nitride high electron mobility transistors fabricated on a freestanding GaN substrate (GaN-on-GaN HEMTs) by simulation. Although the GaN substrate has a lower thermal cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a616c7c924177b3243138278b6f73d0
https://doi.org/10.1109/tcpmt.2021.3116616
https://doi.org/10.1109/tcpmt.2021.3116616