Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Naoya Morisawa"'
Autor:
Katsunori Makihara, Mitsuhisa Ikeda, Sho Nakanishi, Naoya Morisawa, Akira Kawanami, Seiichi Miyazaki
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Autor:
Naoya Morisawa, Katsunori Makihara, Akira Kawanami, Mitsuhisa Ikeda, Sho Nakanishi, Seiichi Miyazaki
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Autor:
Kazuya Matsumoto, Seiichi Miyazaki, Tatsuya Okada, Mitsuhisa Ikeda, Masato Yamane, Naoya Morisawa, Seiichiro Higashi, Katsunori Makihara
Publikováno v:
Japanese Journal of Applied Physics. 50:08KE06
We formed nanometer-scale Pt dots on SiO2 by thermal plasma jet (TPJ) irradiation and demonstrated the feasibility of TPJ millisecond annealing for controlling the areal density of the dots. 2–10-nm-thick Pt/quartz was exposed to an Ar plasma jet a
Autor:
Sho Nakanishi, Katsunori Makihara, Seiichi Miyazaki, Mitsuhisa Ikeda, Naoya Morisawa, Akira Kawanami
Publikováno v:
Japanese Journal of Applied Physics. 49:04DJ04
We have fabricated a metal–oxide–semiconductor (MOS) capacitor with a hybrid floating gate stack consisting of silicon quantum dots (Si-QDs) and NiSi Nanodots (NiSi-NDs) with a 3-nm-thick interlayer SiO2, and studied the effect of 1310 nm light i
Autor:
Toshio SUZUKI, Sinji KUROSE, Tetsuro KAWAMURA, Kan-ichi YASUNAGA, Naoya MORISAWA, Syunsaku FUKUDA, Kosaku MATSUMIYA, Itaru TERAMOTO
Publikováno v:
Journal of the Mining Institute of Japan. 74:715-728
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.